US3216088A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bonding of metal plates to semi-conductor materials
Assignee: Associated Electrical Industries Ltd
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Filing: 1961-12-22
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Granted: 1965-11-09
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Expires: 1981-12-22
Abstract
No abstract record available.
Inventors
- 👤 Fraser Murdo
- 👤 Tilly Graham Parr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:04
CPC Classifications
H; H10; H10N; H10N10/00; H10N10/80; H10N10/81; H10N10/817; Y; Y10; Y10S; Y10S228/00; Y10S228/903
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
97 words
A METHOD OF BONDING A NICKEL PLATE TO A BODY OF GERMANIUM TELLURIDE OF P-TYPE CONDUCTIVITY, WHICH CONSISTS IN APPLYING TO THE AREA OF SAID PLATE TO BE BONDED TO SAID BODY A LAYER OF LEAD-TELLURIDE OF P-TYPE CONDUCTIVITY, HEATING SAID PLATE TO A TEMPERATURE OF ABOUT 720* C. TO ALLOY SAID LAYER TO SAID PLATE, AND THEN HEATING SAID BODY AND SAID PLATE WHILST INCONTACT WITH ONE ANOTHER OVER SAID LAYER TO A TEMPERATURE OF ABOUT 690*C. SO AS TO FUSE SAID LAYER AND CAUSE SAID PLATE TO BE BONDED TO SAID BODY THROUGH SAID LAYER.
Claim 2
Independent Claim
97 words
A METHOD OF BONDING A NICKEL PLATE TO A BODY OF GERMANIUM TELLURIDE OF P-TYPE CONDUCTIVITY, WHICH CONSISTS IN APPLYING TO THE AREA OF SAID PLATE TO BE BONDED TO SAID BODY A LAYER OF LEAD-TELLURIDE OF P-TYPE CONDUCTIVITY, HEATING SAID PLATE TO A TEMPERATURE OF ABOUT 720* C. TO ALLOY SAID LAYER TO SAID PLATE, AND THEN HEATING SAID BODY AND SAID PLATE WHILST INCONTACT WITH ONE ANOTHER OVER SAID LAYER TO A TEMPERATURE OF ABOUT 690*C. SO AS TO FUSE SAID LAYER AND CAUSE SAID PLATE TO BE BONDED TO SAID BODY THROUGH SAID LAYER.
Claim 3
Independent Claim
124 words
THE METHOD OF BONDING TO A SEMI-CONDUCTOR MATERIAL A METAL WITH WHICH THE SEMI-CONDUCTOR MATERIAL IS INCAPABLE OF FORMING AN EFFECTIVE AND LASTING BOND IS HEATING THE MATERIAL TO A FUSING TEMPERATURE WHILE IN CONTACT WITH THE METAL, COMPRISING THE STEPS OF APPLYING TO THE AREA OF THE METAL TO BE BONDED TO THE MATERIAL LAYER OF A SEMI-CONDUCTOR MATERIAL WHICHIS CAPABLE OF FORMING AN EFFECTIVE AND LASTING BOND WITH SAID METAL AND SAID FIRST SEMI-CONDUCTOR MATERIAL, THE TWO SEMI-CONDUCTOR MATERIALS BEING ISOMORPHOUS; ALLOYING THE LAYER TO THE METAL; AND THEN BONDING THE METAL TO THE FIRST SEMI-CONDUCTOR MATERIAL THROUGH THE INTERMEDIARY OF THE LAYER BY HEATING THE LAYER TO A FUSING TEMPERATURE WHILE SAID FIRST SEMI-CONDUCTOR MATERIAL IS IN CONTACT WITH THE LAYER.
Claim 4
Independent Claim
124 words
THE METHOD OF BONDING TO A SEMI-CONDUCTOR MATERIAL A METAL WITH WHICH THE SEMI-CONDUCTOR MATERIAL IS INCAPABLE OF FORMING AN EFFECTIVE AND LASTING BOND IS HEATING THE MATERIAL TO A FUSING TEMPERATURE WHILE IN CONTACT WITH THE METAL, COMPRISING THE STEPS OF APPLYING TO THE AREA OF THE METAL TO BE BONDED TO THE MATERIAL LAYER OF A SEMI-CONDUCTOR MATERIAL WHICHIS CAPABLE OF FORMING AN EFFECTIVE AND LASTING BOND WITH SAID METAL AND SAID FIRST SEMI-CONDUCTOR MATERIAL, THE TWO SEMI-CONDUCTOR MATERIALS BEING ISOMORPHOUS; ALLOYING THE LAYER TO THE METAL; AND THEN BONDING THE METAL TO THE FIRST SEMI-CONDUCTOR MATERIAL THROUGH THE INTERMEDIARY OF THE LAYER BY HEATING THE LAYER TO A FUSING TEMPERATURE WHILE SAID FIRST SEMI-CONDUCTOR MATERIAL IS IN CONTACT WITH THE LAYER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-11-08 | 1969-05-10 | 1969-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-11-08 | 1973-05-10 | 1973-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-11-08 | 1977-05-10 | 1977-11-09 | $7700.00 | Window Closed / Lapsed |