Patent US3448351A successfully refreshed from Google Patents.
US3448351A
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US
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Cryogenic avalanche photodiode of insb with negative resistance characteristic at potential greater than reverse breakdown
Assignee: General Electric Co
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Filing: 1967-06-01
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Granted: 1969-06-03
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Expires: 1987-06-01
Abstract
No abstract record available.
Inventors
- 👤 Richard D Baertsch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:59
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; Y; Y10; Y10S; Y10S505/00; Y10S505/825; Y10S505/873; Y10S505/875
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-06-02 | 1972-12-02 | 1973-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-06-02 | 1976-12-02 | 1977-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-06-02 | 1980-12-02 | 1981-06-03 | $7700.00 | Window Closed / Lapsed |