Patent US3437527A successfully refreshed from Google Patents.
← Back to Patent Explorer
US3437527A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for producing a solar cell having an integral protective covering

Assignee: National Aeronautics and Space Administration
•
Filing: 1966-10-26
•
Granted: 1969-04-08
•
Expires: 1986-10-26
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

No abstract record available.

Inventors

  • 👤 Peter A Iles

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 08:14
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10P; H10P14/00; H10P14/60; H10P95/00; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 136 words
A METHOD FOR PRODUCING A SOLAR CELL HAVING AN INTEGRAL PROTECTIVE COVERING COMPRISING THE STEPS OF: DOPING THE SURFACE OF A SEMICONDUCTOR SLICE OF ONE OF THE CONDUCTIVITY TYPES IN AN OXIDIZING ATMOSPHERE TO CREATE A DIFFUSED SURFACE LAYER OF THE OPPOSITE CONDUCTIVITY TYPE COVERED BY A THIN DIELECTRIC LAYER, REMOVING THE OPPOSITE CONDUCTIVITY TYPE LAYER AND DIELECTRIC LAYER FROM ALL BUT THE TOP SURFACE OF THE SEMICONDUCTOR SLICE, APPLYING A METAL CONTACT TO THE TOP SURFACE OF THE SLICE, DEPOSITING GLASS POWDER ONTO THE TOP SURFACE OF THE SLICE AND OVER THE METAL CONTACT, HEATING THE SLICE TO FUSE THE GLASS POWDER THERETO AND SIMULTANEOUSLY DIFFUSING THE METAL CONTACT THROUGH THE DIELECTRIC LAYER TO ESTABLISH OHMIC CONTACT WITH THE DIFFUSED SURFACE LAYER, AND APPLYING A SECOND METAL CONTACT TO THE BOTTOM SURFACE OF THE SLICE.
Claim 2
Independent Claim 136 words
A METHOD FOR PRODUCING A SOLAR CELL HAVING AN INTEGRAL PROTECTIVE COVERING COMPRISING THE STEPS OF: DOPING THE SURFACE OF A SEMICONDUCTOR SLICE OF ONE OF THE CONDUCTIVITY TYPES IN AN OXIDIZING ATMOSPHERE TO CREATE A DIFFUSED SURFACE LAYER OF THE OPPOSITE CONDUCTIVITY TYPE COVERED BY A THIN DIELECTRIC LAYER, REMOVING THE OPPOSITE CONDUCTIVITY TYPE LAYER AND DIELECTRIC LAYER FROM ALL BUT THE TOP SURFACE OF THE SEMICONDUCTOR SLICE, APPLYING A METAL CONTACT TO THE TOP SURFACE OF THE SLICE, DEPOSITING GLASS POWDER ONTO THE TOP SURFACE OF THE SLICE AND OVER THE METAL CONTACT, HEATING THE SLICE TO FUSE THE GLASS POWDER THERETO AND SIMULTANEOUSLY DIFFUSING THE METAL CONTACT THROUGH THE DIELECTRIC LAYER TO ESTABLISH OHMIC CONTACT WITH THE DIFFUSED SURFACE LAYER, AND APPLYING A SECOND METAL CONTACT TO THE BOTTOM SURFACE OF THE SLICE.

References Cited (Backward Citations)

US3104991A Cited
US3091555A Cited
US3361594A Cited
US3323956A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1972-04-07 1972-10-07 1973-04-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1976-04-07 1976-10-07 1977-04-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1980-04-07 1980-10-07 1981-04-08 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag