Ohmic contacts consisting of a first level of molybdenum-gold mixture of gold and vanadium and a second level of molybdenum-gold

Claim 1

AN OBMIC CONTACT AND ELECTRICAL INTERCONNECTION ARRANGEMENT FOR A SEMICONDUCTOR INTEGRATED CIRCUIT OF THE TYPE HAVING A PLURALITY OF CIRCUIT COMPONENTS FORMED BY SEMICONDUCTOR REGIONS EXTENDING TO ONE FACE OF A BODY OF SEMICONDUCTOR MATERIAL, A PROTECTIVE COATING OF INSULATING MATERIAL UPON SAID ONE FACE, EACH REGION INCLUDING AT LEAST ONE P-N JUNCTION EXTENDING TO THE SAID ONE FACE BENEATH SAID PROTECTIVE COATING, SAID ARRANGEMENT COMPRISING A FIRST FILM ESSENTIALLY OF MOLYBDENUM OHMICALLY ENGAGING AND ELECTRICALLY INTERCONNECTING SELECT ONES OF SAID REGIONS THROUGH APERTURES IN SAID PROTECTIVE COATING, A SECOND FILMESSENTIALLY OF GOLD OVERLYING THE FIRST FILM, A THIRD INTERMETALLIC FILM OF A MIXTURE OF GOLD AND VANADIUM OVERLYING SAID SECOND FILM, AND A VANADIUM OXIDE FILM OVERLYING SAID THIRD INTERMETALLIC FILM.