US3432405A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective masking method of silicon during anodization
Assignee: Fairchild Semiconductor Corp
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Filing: 1966-05-16
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Granted: 1969-03-11
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Expires: 1986-05-16
Abstract
No abstract record available.
Inventors
- 👤 David J Pilling
- 👤 Maurice E Dumesnil
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:03
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6324; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
50 words
A METHOD FOR SELECTIVELY ANODICALLY OXIDIZING SILICON WAFERS IN THE FABRICATION OF SEMICONDUCTOR DEVICES WHICH COMPRISES: COATING THE SILICON SURFACE WITH A CONTINUOUS METAL OXIDE-SILICATE FILM, SELECTIVELY REMOVING THE METAL OXIDE-SILICATE FILM FROM THE AREAS ON THE SILICON WAFER SURFACE TO BE ANODICALLY OXIDIZED, AND ANODICALLY OXIDIZING THE UNPROTECTED AREAS.
Claim 2
Independent Claim
50 words
A METHOD FOR SELECTIVELY ANODICALLY OXIDIZING SILICON WAFERS IN THE FABRICATION OF SEMICONDUCTOR DEVICES WHICH COMPRISES: COATING THE SILICON SURFACE WITH A CONTINUOUS METAL OXIDE-SILICATE FILM, SELECTIVELY REMOVING THE METAL OXIDE-SILICATE FILM FROM THE AREAS ON THE SILICON WAFER SURFACE TO BE ANODICALLY OXIDIZED, AND ANODICALLY OXIDIZING THE UNPROTECTED AREAS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-03-10 | 1972-09-09 | 1973-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-03-10 | 1976-09-09 | 1977-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-03-10 | 1980-09-09 | 1981-03-11 | $7700.00 | Window Closed / Lapsed |