Patent US3478784A successfully refreshed from Google Patents.
Patent US3421055A successfully refreshed from Google Patents.
US3421055A
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Structure and method for preventing spurious growths during epitaxial deposition of semiconductor material
Assignee: Texas Instruments Inc
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Filing: 1965-10-01
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Granted: 1969-01-07
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Expires: 1985-10-01
Abstract
No abstract record available.
Inventors
- 👤 Kenneth E Bean
- 👤 Paul S Gleim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 14:17
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/27; H10P14/271; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/043; Y10S148/05; Y10S148/051; Y10S148/106; Y10S148/164; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24926
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-01-07 | 1972-07-08 | 1973-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-01-07 | 1976-07-08 | 1977-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-01-07 | 1980-07-08 | 1981-01-07 | $7700.00 | Window Closed / Lapsed |