US3420776A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for introduction of oxygen vacancies in perovskite ferroelectric crystals
Assignee: AT&T Inc
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Filing: 1966-03-10
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Granted: 1969-01-07
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Expires: 1986-03-10
Abstract
No abstract record available.
Inventors
- 👤 Ralph T Hepplewhite
- 👤 Dawon Kahng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:50
CPC Classifications
H; H01; H01G; H01G7/00; H01G7/02; H01G7/025; C; C30; C30B; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/32; C30B33/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
57 words
THE METHOD OF CREATING OXYGEN VACANCIES IN A FERROELECTRIC OXIDE CRYSTAL COMPRISING THE STEP OF HEATING THE CRYSTAL AT A TEMPERATURE AT WHICH THE OXYGEN HAS A HIGH DIFFUSIVITY IN AN AMBIENT OF TH VAPOR OF A METAL WHOSE FREE ENERGY OF FORMATION OF THE METAL OXIDE AT SUCH TEMPERATURE IS LARGER THAN THAT OF THE CRYSTAL.
Claim 2
Independent Claim
57 words
THE METHOD OF CREATING OXYGEN VACANCIES IN A FERROELECTRIC OXIDE CRYSTAL COMPRISING THE STEP OF HEATING THE CRYSTAL AT A TEMPERATURE AT WHICH THE OXYGEN HAS A HIGH DIFFUSIVITY IN AN AMBIENT OF TH VAPOR OF A METAL WHOSE FREE ENERGY OF FORMATION OF THE METAL OXIDE AT SUCH TEMPERATURE IS LARGER THAN THAT OF THE CRYSTAL.
References Cited (Backward Citations)
US3316518A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-01-07 | 1972-07-08 | 1973-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-01-07 | 1976-07-08 | 1977-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-01-07 | 1980-07-08 | 1981-01-07 | $7700.00 | Window Closed / Lapsed |