Ceramic resistor contacted barrier-free with noble metal

Claim 1

A CERAMIC SEMICONDUCTOR RESISTOR COMPRISING A BODY HAVING OPPOSITE END SURFACES AND CONSISTING OF SINTERED TOGETHER DOPED FERROELECTRIC CRYSTALLITE PARTICLES WITH PEROVSKITE-STRUCTURE FROM TWO-VALENT AND FOUR-VALENT METALS WITH HIGH POSITIVE TEMPERATURE COEFFICIENT TO RESISTANCE AND WITH A SUBSTANTIALLY NEGLIGIBLE VOLTAGE DEPENDENCE OF THE ENTIRE RESISTANCE, THE CERAMIC SEMICONDUCTOR BODY BEING PROVIDED AT THE OPPOSITE END SURFACES THEREOF WITH BARRIER-FREE CONTACT AREAS BY CONDUCTING A HOT REDUCING GAS THEREOVER, A PAIR OF BARRIER-FREE METAL CONTACT LAYERS EACH DISPOSED ON A RESPECTIVE OPPOSITE END SURFACE OF SAID BODY, SAID CONTACT LAYERS BEING A NOBLE MEATL WHICH IS INEFFECTIVE TO REDUCE THE FOUR-VALENT METAL OXIDE OF THE FERROELECTRIC MATERIAL CONTAINED IN SAID BODY, SAID DEVICE HAVING A CHARACTERISTIC SUCH THAT THE NEGATIVE OXIDE-FORMING ENTHALPY OF SAID NOBLE METAL IS SMALLER THAN THE FORMATION ENTHAPLY OF THE TRANSISITION FROM TI2O3 TO TIO2.