Patent US3416979A successfully refreshed from Google Patents.
US3416979A
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Method of making a variable capacitance silicon diode with hyper abrupt junction
Assignee: Panasonic Holdings Corp
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Filing: 1965-08-13
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Granted: 1968-12-17
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Expires: 1985-08-13
Abstract
No abstract record available.
Inventors
- 👤 Onuma Takeshi
- 👤 Terasaki Takeshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:53
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/64; C; C22; C22C; C22C13/00; C22C13/02; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/16; H10P95/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3078195A
Cited
US2937961A
Cited
US3121828A
Cited
US3258371A
Cited
US3307088A
Cited
US3243325A
Cited
US3235419A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-12-17 | 1972-06-17 | 1972-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-12-17 | 1976-06-17 | 1976-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-12-17 | 1980-06-17 | 1980-12-17 | $7700.00 | Window Closed / Lapsed |