Patent US1724627A successfully refreshed from Google Patents.
Patent US3406050A successfully refreshed from Google Patents.
US3406050A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making electrical contact to a semiconductor body
Assignee: Texas Instruments Inc
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Filing: 1965-08-04
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Granted: 1968-10-15
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Expires: 1985-08-04
Abstract
No abstract record available.
Inventors
- 👤 Samuel R Shortes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:54
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/051; Y10S148/065
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
118 words
THE METHOD OF MAKING AN EMITTER AND EMITTER CONTACT ELECTRODE ON AN NPN GALLIUM ARSENIDE TRANSISTOR COMPRISING THE STEPS OF: (A) COATING THE P-TYPE SURFACE OF A BODY OF GALLIUM ARSENIDE COMPRISED OF CONTIGUOUS REGIONS OF N- AND P-TYPE CONDUCTIVITY MATERIAL WITH A PROTECTIVE FILM; (B) FORMING A WINDOW IN SAID COATING; (C) ALLOYING A DONOR MATERIAL TO THE P-TYPE CONDUCTIVITY SURFACE EXPOSED THROUGH SAID WINDOW, THEREBY FORMING AN N-TYPE REGROWTH REGION IN SAID EXPOSED P-TYPE SURFACE; (D) REMOVING SUBSTANTIALLY ALL OF SAID DONOR MATERIAL WHICH IS NOT INCLUDED IN SAID REGROWTH REGION; AND (E) SELECTIVELY EVAPORATING A METAL CONTACT MATERIAL TO ELECTRICALLY ENGAGE SAID REGROWTH REGION AND EXTEND OVER PART OF THE SURFACE OF S AID COATING.
Claim 2
Independent Claim
118 words
THE METHOD OF MAKING AN EMITTER AND EMITTER CONTACT ELECTRODE ON AN NPN GALLIUM ARSENIDE TRANSISTOR COMPRISING THE STEPS OF: (A) COATING THE P-TYPE SURFACE OF A BODY OF GALLIUM ARSENIDE COMPRISED OF CONTIGUOUS REGIONS OF N- AND P-TYPE CONDUCTIVITY MATERIAL WITH A PROTECTIVE FILM; (B) FORMING A WINDOW IN SAID COATING; (C) ALLOYING A DONOR MATERIAL TO THE P-TYPE CONDUCTIVITY SURFACE EXPOSED THROUGH SAID WINDOW, THEREBY FORMING AN N-TYPE REGROWTH REGION IN SAID EXPOSED P-TYPE SURFACE; (D) REMOVING SUBSTANTIALLY ALL OF SAID DONOR MATERIAL WHICH IS NOT INCLUDED IN SAID REGROWTH REGION; AND (E) SELECTIVELY EVAPORATING A METAL CONTACT MATERIAL TO ELECTRICALLY ENGAGE SAID REGROWTH REGION AND EXTEND OVER PART OF THE SURFACE OF S AID COATING.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-10-15 | 1972-04-15 | 1972-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-10-15 | 1976-04-15 | 1976-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-10-15 | 1980-04-15 | 1980-10-15 | $7700.00 | Window Closed / Lapsed |