Abstract 1,114,367. Semiconductor devices. WESTINGHOUSE ELECTRIC CORPORATION. 12 May, 1966 [26 May, 1965], No. 21044/66. Heading H1K. A metallic lead is bonded to a semi-conductor body by placing the lead in contact with the body and focusing on to the area of contact a beam of coherent radiation having a wavelength at which the body has a low radiation absorption coefficient, so that the major portion of the energy of the radiation is absorbed by the lead to fuse it to the body without causing thermal damage to the body. Preferably the body is made of silicon and the coherent radiation, having a wavelength of 1.06 microns, is emitted by a laser comprising glass, calcium tungstate or strontium molybdate doped with neodymium and pumped by a helical xenon flashtube. The body may comprise a bipolar or unipolar transistor with its upper surface covered by a layer of silicon dioxide formed with windows for the attachment of leads.
IN THE METHOD FOR BONDING AN ELECTRICAL METALLIC CONDUCTOR DIRECTLY TO AN EXPOSED AREA OF A SURFACE OF A WAFER OF SEMICONDUCTIVE SILICON, THE STEPS OF POSITIONING THE ELECTRICAL CONDUCTOR OVER SAID EXPOSED AREA AND IN DIRECT CONTACT THEREWITH, GENERATING A BEAM OF COHERENT LIGHT HAVING A WAVELENGHT AVOVE 1.0 MICRON, AND FOCUSING SAID BEAM OF COHERENT LIGHT ONTO THE EXPOSED AREA OF THE WAFER SURFACE WITH THE ELECTRICAL CONDUCTOR IN DIRECT CONTACT WITH THE WAFER SURFACE TO THEREBY FUSE THE CONDUCTOR DIRECTLY TO THE SILICON WITHOUT CREATING EXCESSIVE HEAT AT THE SURFACE OF THE WAFER.
Claim 2
Dependent Claim
96 words
IN THE METHOD FOR BONDING AN ELECTRICAL METALLIC CONDUCTOR DIRECTLY TO AN EXPOSED AREA OF A SURFACE OF A WAFER OF SEMICONDUCTIVE SILICON, THE STEPS OF POSITIONING THE ELECTRICAL CONDUCTOR OVER SAID EXPOSED AREA AND IN DIRECT CONTACT THEREWITH, GENERATING A BEAM OF COHERENT LIGHT HAVING A WAVELENGHT AVOVE 1.0 MICRON, AND FOCUSING SAID BEAM OF COHERENT LIGHT ONTO THE EXPOSED AREA OF THE WAFER SURFACE WITH THE ELECTRICAL CONDUCTOR IN DIRECT CONTACT WITH THE WAFER SURFACE TO THEREBY FUSE THE CONDUCTOR DIRECTLY TO THE SILICON WITHOUT CREATING EXCESSIVE HEAT AT THE SURFACE OF THE WAFER.