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Patent US3795153A successfully refreshed from Google Patents.
US3384518A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making semiconductor devices
Assignee: Panasonic Holdings Corp
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Filing: 1965-09-30
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Granted: 1968-05-21
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Expires: 1985-09-30
Abstract
No abstract record available.
Inventors
- 👤 Shoda Koichiro
- 👤 Moriyama Kyoji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:37
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23C; C23C2/00; C23C2/14; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/151; Y10S438/00; Y10S438/955
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
153 words
A METHOD FOR MAKING SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF FORMING A THIN LAYER OF INERT COATING MATERIAL ON THE SURFACE OF A SEMICONDUCTOR WAFER, FORMING OPENINGS OF DESIRED CONTACT SHAPE THROUGH PORTIONS OF THE SAID COATING LAYER, AND IMMERSING THE SAID SEMICONDUCTOR WAFER FOR A SHORT IME IN A MOLTEN ALLOY BATH, WHICH IS PREPARED BY HEATING TO MELT AN ALLOYING MATERIAL AND TO WHICH ULTRASONIC VIBRATION IF CONTINUSOULY IMPARTED, THEREBY CAUSING THOSE PROTIONS OF THE SAID SEMICONDUCTOR WHICH ARE EXPOSED THROUGH THE OPENINGS THROUGH SAID COATING LAYER ON THE SAID SEMICONDUCTOR WAFER TO DISSOLVE INTO THE MOLTEN ALLOYING MATERIAL IN THE SAID ALLOY BATH BY SUCH AN AMOUNT AS TO PROVIDE RECESSES OF A CERTAIN DEPTH AND CAUSING THE SAID ALLOYING MATERIAL AND THE SAID SEMICONDUCTOR TO ALLOY WITH EACH OTHER TO FORM A RECRYSTALLIZED LAYER CAOVERING THE ENTIRE SURFACE OF EACH PRECESS PROVIDED BY THE DISSOLUTION OF THE SAID SEMICONDUCTOR.
Claim 2
Independent Claim
153 words
A METHOD FOR MAKING SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF FORMING A THIN LAYER OF INERT COATING MATERIAL ON THE SURFACE OF A SEMICONDUCTOR WAFER, FORMING OPENINGS OF DESIRED CONTACT SHAPE THROUGH PORTIONS OF THE SAID COATING LAYER, AND IMMERSING THE SAID SEMICONDUCTOR WAFER FOR A SHORT IME IN A MOLTEN ALLOY BATH, WHICH IS PREPARED BY HEATING TO MELT AN ALLOYING MATERIAL AND TO WHICH ULTRASONIC VIBRATION IF CONTINUSOULY IMPARTED, THEREBY CAUSING THOSE PROTIONS OF THE SAID SEMICONDUCTOR WHICH ARE EXPOSED THROUGH THE OPENINGS THROUGH SAID COATING LAYER ON THE SAID SEMICONDUCTOR WAFER TO DISSOLVE INTO THE MOLTEN ALLOYING MATERIAL IN THE SAID ALLOY BATH BY SUCH AN AMOUNT AS TO PROVIDE RECESSES OF A CERTAIN DEPTH AND CAUSING THE SAID ALLOYING MATERIAL AND THE SAID SEMICONDUCTOR TO ALLOY WITH EACH OTHER TO FORM A RECRYSTALLIZED LAYER CAOVERING THE ENTIRE SURFACE OF EACH PRECESS PROVIDED BY THE DISSOLUTION OF THE SAID SEMICONDUCTOR.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-05-21 | 1971-11-20 | 1972-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-05-21 | 1975-11-20 | 1976-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-05-21 | 1979-11-20 | 1980-05-21 | $7700.00 | Window Closed / Lapsed |