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US3375145A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making semiconductor devices

Assignee: International Standard Electric Corp
•
Filing: 1965-08-25
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Granted: 1968-03-26
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Expires: 1985-08-25
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Abstract

No abstract record available.

Inventors

  • 👤 Setchfield John Bernard
  • 👤 Allen Stanley George

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 15:24
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10D; H10D99/00; Y; Y10; Y10S; Y10S438/00; Y10S438/979

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 119 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR JUNCTION DEVICE WHICH INCLUDES THE STEPS OF PROVIDING A LAYER OF SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE ON PART OF A FACE OF AN EFFECTIVELY INSULATING BASE, PROVIDING AN ELECTRICALLY CONDUCTING LAYER ON ANOTHER PART OF SAID FACE SPACED FROM SAID SEMICONDUCTOR LAYER, PLACING A PELLET OF IMPURITY MATERIAL OF THE OPPOSITE CONDUCTIVITY TYPE IN THE SPACE BETWEEN SAID SEMICONDUCTOR LAYER AND SAID CONDUCTING LAYER WITH THE PELLET IN CONTACT WITH EACH OF SAID LAYERS, AND HEATING SO AS TO ALLOY SAID IMPURITY MATERIAL WITH SAID SEMICONDUCTOR LAYER TO FORM A JUNCTION THEREIN AND WITH SAID CONDUCTING LAYER TO ESTABLISH OHMIC ELECTRICAL CONNECTION BETWEEN SAID OPPOSITE CONDUCTIVITY TYPE MATERIAL AND SAID CONDUCTING LAYER.
Claim 2
Independent Claim 119 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR JUNCTION DEVICE WHICH INCLUDES THE STEPS OF PROVIDING A LAYER OF SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE ON PART OF A FACE OF AN EFFECTIVELY INSULATING BASE, PROVIDING AN ELECTRICALLY CONDUCTING LAYER ON ANOTHER PART OF SAID FACE SPACED FROM SAID SEMICONDUCTOR LAYER, PLACING A PELLET OF IMPURITY MATERIAL OF THE OPPOSITE CONDUCTIVITY TYPE IN THE SPACE BETWEEN SAID SEMICONDUCTOR LAYER AND SAID CONDUCTING LAYER WITH THE PELLET IN CONTACT WITH EACH OF SAID LAYERS, AND HEATING SO AS TO ALLOY SAID IMPURITY MATERIAL WITH SAID SEMICONDUCTOR LAYER TO FORM A JUNCTION THEREIN AND WITH SAID CONDUCTING LAYER TO ESTABLISH OHMIC ELECTRICAL CONNECTION BETWEEN SAID OPPOSITE CONDUCTIVITY TYPE MATERIAL AND SAID CONDUCTING LAYER.

References Cited (Backward Citations)

US2846626A Cited
US2960640A Cited
US3160534A Cited
US3322581A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1971-03-26 1971-09-25 1972-03-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1975-03-26 1975-09-25 1976-03-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1979-03-26 1979-09-25 1980-03-26 $7700.00 Window Closed / Lapsed

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