Patent US3366879A successfully refreshed from Google Patents.
US3366879A
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US
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Method for measuring the specific resistance of a silicon crystal by measuring the breakdown voltage
Assignee: Fujitsu Ltd
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Filing: 1964-10-16
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Granted: 1968-01-30
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Expires: 1984-10-16
Abstract
No abstract record available.
Inventors
- 👤 Kobayashi Masaaki
- 👤 Tsurumiya Kiyoyuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:16
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/282; G01R31/2831; G01R31/26; G01R31/2607; G01R31/2637; H; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
DE1079196B
Cited
US3265944A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-01-29 | 1971-07-31 | 1972-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-01-29 | 1975-07-31 | 1976-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-01-29 | 1979-07-31 | 1980-01-30 | $7700.00 | Window Closed / Lapsed |