Patent US3357902A successfully refreshed from Google Patents.
← Back to Patent Explorer
US3357902A Expired / Lapsed US ⏱️ 0.0 years remaining

Use of anodizing to reduce channelling on semiconductor material

Assignee: Fairchild Semiconductor Corp
•
Filing: 1964-05-01
•
Granted: 1967-12-12
•
Expires: 1984-05-01
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

No abstract record available.

Inventors

  • 👤 Benjamini Eddi
  • 👤 Edward F Duffek

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 17:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10D; H10D99/00; H10P14/6324; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S205/00; Y10S205/917

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 96 words
IN THE PROCESS FOR MAKING DIFFUSED SILICON SEMICONDUCTOR DEVICES HAVING A PERMANENT SEMICONDUCTOR OXIDE COATING ON ONE SURFACE THEREOF, SAID PROCESS INCLUDING AT LEAST ONE DIFFUSING STEP WHICH RESULTS IN THE GROWTH OF A COATING OF OXIDE OF THE SEMICONDUCTOR MATERIAL ON SAID SURFACE, THE IMPROVEMENT WHICH COMPRISES REMOVING SAID GROWN OXIDE FROM SAID SURFACE OF SAID SEMICONDUCTOR MATERIAL BY ETCHING AND THEREAFTER ANODICALLY DEPOSITING IN A SUBSTANTIALLY NON-AQUEOUS ELECTROLYTE A NEW COATING OF AN OXIDE OF A SEMICONDUCTOR MATERIAL, THE NEW COATING HAVING MUCH LESS TENDENCY TO INDUCE THE FORMATION FO CHANNELS AT SAID SURFACE.
Claim 2
Dependent Claim 96 words
IN THE PROCESS FOR MAKING DIFFUSED SILICON SEMICONDUCTOR DEVICES HAVING A PERMANENT SEMICONDUCTOR OXIDE COATING ON ONE SURFACE THEREOF, SAID PROCESS INCLUDING AT LEAST ONE DIFFUSING STEP WHICH RESULTS IN THE GROWTH OF A COATING OF OXIDE OF THE SEMICONDUCTOR MATERIAL ON SAID SURFACE, THE IMPROVEMENT WHICH COMPRISES REMOVING SAID GROWN OXIDE FROM SAID SURFACE OF SAID SEMICONDUCTOR MATERIAL BY ETCHING AND THEREAFTER ANODICALLY DEPOSITING IN A SUBSTANTIALLY NON-AQUEOUS ELECTROLYTE A NEW COATING OF AN OXIDE OF A SEMICONDUCTOR MATERIAL, THE NEW COATING HAVING MUCH LESS TENDENCY TO INDUCE THE FORMATION FO CHANNELS AT SAID SURFACE.

References Cited (Backward Citations)

US2820745A Cited
US2818374A Cited
US3100329A Cited
US3282809A Cited
US3281915A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1970-12-11 1971-06-12 1971-12-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1974-12-11 1975-06-12 1975-12-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1978-12-11 1979-06-12 1979-12-12 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag