US3355334A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of shaping p-n junction profiles
Assignee: International Business Machines Corp
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Filing: 1965-03-31
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Granted: 1967-11-28
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Expires: 1985-03-31
Abstract
No abstract record available.
Inventors
- 👤 Vir A Dhaka
- 👤 Edward S Wajda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:31
CPC Classifications
H; H10; H10P; H10P32/00; Y; Y10; Y10S; Y10S148/00; Y10S148/039; Y10S148/045; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
159 words
A METHOD OF ALTERING THE DISTRIBUTION OF IMPURITIES SELECTED FROM GROUP III AND GROUP V OF THE PERIODIC TABLE IN A SEMICONDUCTOR DEVICE WHOSE MATERIAL IS SELECTED FROM THE CLASS CONSISTING OF SILICON AND GERMANIUM WHICH IMPURITIES ARE OF BOTH A P-CONDUCTIVITY TYPE AND AN N-CONDUCTIVITY TYPE AND WHICH IMPURITIES ARE EACH CHARACTERIZED BY A TEMPERATURE DEPENDENT MOBILITY SUCH THAT, ABOVE A PARTICULAR TEMPERATURE WHICH LIES IN THE RANGE OF SEVERAL HUNDRED DEGREES CENTIGRADE TO THE MELTING POINT OF THE SEMICONDUCTOR, THE MOBILITY DIRECTIONS OF THE RESPECTIVE DIFFERENT CONDUCTIVITY TYPE IMPURITIES ARE OPPOSITE TO ONE ANOTHER, SAID METHOD COMPRISING THE STEPS OF: RAISING THE TEMPERATURE OF THE DEVICE ABOVE SAID PARTICULAR TEMPERATURE; AND PASSING A DIRECT ELECTRIC CURRENT THROUGH SAID DEVICE FOR A SUFFICIENT PERIOD OF TIME TO ACHIEVE A PARTRICULAR DISTRIBUTION OF BOTH THE P-TYPE AND N-TYPE IMPURITIES WHERE THE ELECTROMIGRATION OF THE RESPECTIVE IMPURITIES IS PROPORTIONAL TO THE TIME DURING WHICH CURRENT IS PASSED THROUGH SAID DEVICE.
Claim 2
Independent Claim
159 words
A METHOD OF ALTERING THE DISTRIBUTION OF IMPURITIES SELECTED FROM GROUP III AND GROUP V OF THE PERIODIC TABLE IN A SEMICONDUCTOR DEVICE WHOSE MATERIAL IS SELECTED FROM THE CLASS CONSISTING OF SILICON AND GERMANIUM WHICH IMPURITIES ARE OF BOTH A P-CONDUCTIVITY TYPE AND AN N-CONDUCTIVITY TYPE AND WHICH IMPURITIES ARE EACH CHARACTERIZED BY A TEMPERATURE DEPENDENT MOBILITY SUCH THAT, ABOVE A PARTICULAR TEMPERATURE WHICH LIES IN THE RANGE OF SEVERAL HUNDRED DEGREES CENTIGRADE TO THE MELTING POINT OF THE SEMICONDUCTOR, THE MOBILITY DIRECTIONS OF THE RESPECTIVE DIFFERENT CONDUCTIVITY TYPE IMPURITIES ARE OPPOSITE TO ONE ANOTHER, SAID METHOD COMPRISING THE STEPS OF: RAISING THE TEMPERATURE OF THE DEVICE ABOVE SAID PARTICULAR TEMPERATURE; AND PASSING A DIRECT ELECTRIC CURRENT THROUGH SAID DEVICE FOR A SUFFICIENT PERIOD OF TIME TO ACHIEVE A PARTRICULAR DISTRIBUTION OF BOTH THE P-TYPE AND N-TYPE IMPURITIES WHERE THE ELECTROMIGRATION OF THE RESPECTIVE IMPURITIES IS PROPORTIONAL TO THE TIME DURING WHICH CURRENT IS PASSED THROUGH SAID DEVICE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-11-27 | 1971-05-29 | 1971-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-11-27 | 1975-05-29 | 1975-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-11-27 | 1979-05-29 | 1979-11-28 | $7700.00 | Window Closed / Lapsed |