Patent US1939130A successfully refreshed from Google Patents.
← Back to Patent Explorer
US2916408A Expired / Lapsed US ⏱️ 0.0 years remaining

Fabrication of junction transistors

Assignee: Raytheon Co
•
Filing: 1956-03-29
•
Granted: 1959-12-08
•
Expires: 1976-03-29
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

No abstract record available.

Inventors

  • 👤 Freedman George

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 10:48
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/645; C; C30; C30B; C30B31/00; C30B31/04; H10D99/00; H10P; H10P95/00

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 169 words
THE METHOD OF MAKING A SEMICONDUCTIVE DEVICE, SAID METHOD COMPRISING FIRST PROVIDING A SEMICONDUCTIVE BODY WITH TWO REGIONS OF DIFFERENT ELECTRICAL CONDUCTIVITY-TYPE MATERIAL, THE INTERFACE BETWEEN SAID TWO REGIONS CONSTITUTING A FIRST P-N JUNCTION, PLACING A FIRST ELECTRODE IN CONTACT WITH ONE OF SAID REGIONS, SAID FIRST ELECTRODE CONTAINING AN IMPURITY MATERIAL OPPOSITE TO THAT WHICH EXISTS IN THE PORTION OF SAID BODY WITH WHICH IT IS IN CONTACT, PASSING AN ELECTRIC CURRENT THROUGH SAID FIRST ELECTRODE AND THROUGH A SECOND ELECTRODE POSITIONED ON THE SAME SIDE OF SAID FIRST JUNCTION AS SAID FIRST ELECTRODE TO CONVERT A PORTION OF SAID BODY UNDER SAID FIRST ELECTRODE TO THE SAME ELECTRICAL CONDUCTIVITY-TYPE MATERIAL AS THE IMPURITY IN SAID FIRST ELECTRODE WHEREBY A SECOND P-N JUNCTION IS CREATED, AND INTERMITTENTLY AND SELECTIVELY PASSING PULSES OF ADDITIONAL CURRENT THROUGH SAID ELECTRODES TO CAUSE SAID SECOND P-N JUNCTION TO BE MOVED PROGRESSIVELY CLOSER TO SAID FIRST P-N JUNCTION WHILE MAINTAINING THE PHYSICAL POSITION OF SAID FIRST P-N JUNCTION SUBSTANTIALLY CONSTANT IN SAID BODY.
Claim 2
Independent Claim 169 words
THE METHOD OF MAKING A SEMICONDUCTIVE DEVICE, SAID METHOD COMPRISING FIRST PROVIDING A SEMICONDUCTIVE BODY WITH TWO REGIONS OF DIFFERENT ELECTRICAL CONDUCTIVITY-TYPE MATERIAL, THE INTERFACE BETWEEN SAID TWO REGIONS CONSTITUTING A FIRST P-N JUNCTION, PLACING A FIRST ELECTRODE IN CONTACT WITH ONE OF SAID REGIONS, SAID FIRST ELECTRODE CONTAINING AN IMPURITY MATERIAL OPPOSITE TO THAT WHICH EXISTS IN THE PORTION OF SAID BODY WITH WHICH IT IS IN CONTACT, PASSING AN ELECTRIC CURRENT THROUGH SAID FIRST ELECTRODE AND THROUGH A SECOND ELECTRODE POSITIONED ON THE SAME SIDE OF SAID FIRST JUNCTION AS SAID FIRST ELECTRODE TO CONVERT A PORTION OF SAID BODY UNDER SAID FIRST ELECTRODE TO THE SAME ELECTRICAL CONDUCTIVITY-TYPE MATERIAL AS THE IMPURITY IN SAID FIRST ELECTRODE WHEREBY A SECOND P-N JUNCTION IS CREATED, AND INTERMITTENTLY AND SELECTIVELY PASSING PULSES OF ADDITIONAL CURRENT THROUGH SAID ELECTRODES TO CAUSE SAID SECOND P-N JUNCTION TO BE MOVED PROGRESSIVELY CLOSER TO SAID FIRST P-N JUNCTION WHILE MAINTAINING THE PHYSICAL POSITION OF SAID FIRST P-N JUNCTION SUBSTANTIALLY CONSTANT IN SAID BODY.

References Cited (Backward Citations)

US2697269A Cited
FR1038658A Cited
US2654059A Cited
US2757323A Cited
GB738216A Cited
US2793332A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1962-12-07 1963-06-08 1963-12-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1966-12-07 1967-06-08 1967-12-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1970-12-07 1971-06-08 1971-12-08 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag