US3354007A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a semiconductor by diffusion by using a crystal masking technique
Assignee: International Business Machines Corp
•
Filing: 1965-04-02
•
Granted: 1967-11-21
•
Expires: 1985-04-02
Abstract
No abstract record available.
Inventors
- 👤 Michelitsch Michael
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/27; H10P14/271; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/106; Y10S148/115; Y10S148/145; Y10S438/00; Y10S438/942
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
96 words
A METHOD FOR PRODUCING APERTURES IN A MASKING MATERIAL COMPRISING THE STEPS OF: SELECTING A SEMICONDUCTOR SUBSTRATE MATERIAL HAVING A GIVEN TEMPERATURE COEFFICIENT OF EXPANSION, DEPOSITING ON A SURFACE OF SAID SUBSTRATE IN BONDED RELATIONSHIP THEREWITH A DIELECTRIC MASKING MATERIAL HAVING A TEMPERATURE COEFFICIENT OF EXPANSION DIFFERENT FROM SAID GIVEN TEMPERATURE COEFFICIENT OF EXPANSION, GROOVING SIAD MASKING MATERIAL TO PRODUCE CREVICES ALONG THE LENGTHS OF GROOVES PRODUCED THEREBY, AND HEATING SAID SUBSTRATE AND SAID MASKING MATERIAL TO A TEMPERATURE SUFFICIENT TO CAUSE THE FORMATION OF APERTURES IN THE FORM OF CRYSTALLOGRAPHICALLY ORIENTED CREVICES IN SAID GROOVES.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-11-20 | 1971-05-22 | 1971-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-11-20 | 1975-05-22 | 1975-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-11-20 | 1979-05-22 | 1979-11-21 | $7700.00 | Window Closed / Lapsed |