Multi-aperture mated thin film memory element

Claim 1

A MAGNETIC MEMORY ELEMENT, COMPRISING: A SUBSTRATE MEMBER; SAID SUBSTRATE MEMBER HAVING FIRST AND SECOND APERTURE THERETHROUGH AND FORMING A WEB THEREBETWEEN; FIRST AND SECOND OPEN-FLUX-PATH LAYERS OF A MAGNETIZABLE MATERIAL; SAID FIRST AND SECOND LAYERS EACH ASSOCIATED WITH SAID FIRST AND SECOND APERTURES, RESPECTIVELY; A CONDUCTIVE STRIP HAVING A LONGITUDINAL AXIS ORIENTED ALONG SAID WEB; THIRD AND FOURTH OPEN-FLUX-PATH LAYERS OF MAGNETIZABLE MATERIAL; SAID THIRD AND FOURTH FILM LAYERS EACH ASSOCIATED WITH SAID FIRST AND SECOND APERTURES, RESPECTIVELY, AND EACH HAVING PORTIONS SUPERPOSED PORTIONS OF SAID FIRST AND SECOND LAYERS, RESPECTIVELY, FOR CLOSING THE OTHERWISE OPEN FLUX PATH OF SAID FIRST AND SECOND LAYERS AROUND SAID FIRST AND SECOND APERTURES, RESPECTIVELY, WHEREIN SAID FIRST AND FOURTH LAYERS HAVE SUPERPOSED CENTRAL PORTIONS IN THE AREA OF SAID WEB FOR SANDWICHING AND ENVELOPING SAID CONDUCTIVE STRIP THEREBETWEEN WITH SAID CENTRAL PORTIONS HAVING SIDES OVERLAPPING SAID ENVELOPED CONDUCTIVE STRIP FOR FORMING CLOSELY-COUPLED MATED-FILM PORTIONS FOR CREATING A SUBSTANTIALLYCLOSED FLUX PATH ABOUT SAID ENVELOPED CONDUCTIVE STRIP AND ORTHOGONAL THE LONGITUDINAL AXIS THEREOF; SAID SUPERPOSED CENTRAL PORTIONS AND SAID ENVELOPED CONDUCTIVE STRIP FORMING A MEMORY AREA, BINARY INFORMATION STORED IN SAID MEMORY AREA IN A FIRST OR SECOND AND OPPOSITE CIRCUMFERENTIAL FLUX DIRECTION ABOUT SAID ENVELOPE CONDUCTIVE STRIP.