Patent US3349474A successfully refreshed from Google Patents.
US3349474A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: RCA Corp
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Filing: 1966-08-05
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Granted: 1967-10-31
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Expires: 1986-08-05
Abstract
No abstract record available.
Inventors
- 👤 Daniel H Rauscher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:02
CPC Classifications
H; H10; H10D; H10D99/00; H10F; H10F99/00; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P95/00; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/053; Y10S148/062; Y10S148/162; Y10S438/00; Y10S438/909; Y10S438/91
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
113 words
THE METHOD OF FORMING A CONDUCTIVE CHANNEL OF DESIRED CONDUCTIVITY IN A CRYSTALLINE SILICON BODY COMPRISING THE STEPS OF FORMING A COATING OF SILICON OXIDE ON SAID SILICON BODY BY HEATING IT IN A DRY OXYGEN AMBIENT FOR A TIME AND AT A TEMPERATURE INSUFFICIENT TO RAISE THE CONDUCTIVITY OF SAID BODY NEAR THE INTERFACE BETWEEN SAID BODY AND SAID COATING, SAID CONDUCTIVITY BEING INITIALLY, AND THUS BEING HELD, AT A VALUE LESS THAN SAID DESIRED CONDUCTIVITY; AND THEREAFTER HEATING SAID BODY IN A FREE-HYDROGEN-CONTAINING REDUCING AMBIENT FOR A TIME AND AT A TEMPERATURE SUFFICIENT TO FORM IN SAID BODY A THIN CONDUCTIVE CHANNEL OF SAID DESIRED CONDUCTIVITY UNDERNEATH SAID SILICON OXIDE COATING.
Claim 2
Independent Claim
113 words
THE METHOD OF FORMING A CONDUCTIVE CHANNEL OF DESIRED CONDUCTIVITY IN A CRYSTALLINE SILICON BODY COMPRISING THE STEPS OF FORMING A COATING OF SILICON OXIDE ON SAID SILICON BODY BY HEATING IT IN A DRY OXYGEN AMBIENT FOR A TIME AND AT A TEMPERATURE INSUFFICIENT TO RAISE THE CONDUCTIVITY OF SAID BODY NEAR THE INTERFACE BETWEEN SAID BODY AND SAID COATING, SAID CONDUCTIVITY BEING INITIALLY, AND THUS BEING HELD, AT A VALUE LESS THAN SAID DESIRED CONDUCTIVITY; AND THEREAFTER HEATING SAID BODY IN A FREE-HYDROGEN-CONTAINING REDUCING AMBIENT FOR A TIME AND AT A TEMPERATURE SUFFICIENT TO FORM IN SAID BODY A THIN CONDUCTIVE CHANNEL OF SAID DESIRED CONDUCTIVITY UNDERNEATH SAID SILICON OXIDE COATING.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-10-30 | 1971-05-01 | 1971-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-10-30 | 1975-05-01 | 1975-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-10-30 | 1979-05-01 | 1979-10-31 | $7700.00 | Window Closed / Lapsed |