Patent US3341379A successfully refreshed from Google Patents.
US3341379A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacture of silicon transistor
Assignee: Fujitsu Ltd
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Filing: 1964-12-14
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Granted: 1967-09-12
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Expires: 1984-12-14
Abstract
No abstract record available.
Inventors
- 👤 Yasufuku Matami
- 👤 Kawamura Toyosaku
- 👤 Matsumoto Yoshihiro
- 👤 Kuramochi Atsuo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:21
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P50/00; H10P50/69; H10P50/691; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/051; Y10S148/085
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
127 words
A METHOD OF MANUFACTURE OF A MESA TRANSISTOR, COMPRISING THE STEPS OF PROVIDING A FIRST LAYER OF DETERMINED CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL; PROVIDING A SECOND LAYER OF OPPOSITE CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL ON SAID FIRST LAYER; COVERING THE SECOND LAYER WITH AN OXIDE LAYER; PROVIDING A ZONE OF SAID DETERMINED CONDUCTIVITY TYPE IN SAID SECOND LAYER; REMOVING THE OXIDE LAYER FROM SAID SECOND LAYER EXCEPT FOR AN AREA COVERING ZONE OF DETERMINED CONDUCTIVITY TYPE; COVERING THE REMAINING OXIDE LAYER AND THE AREA OF SAID SECOND LAYER SUBSTANTIALLY CIRCUMFERENTIAL TO SAID REMAINING OXIDE LAYER WITH A MATERIAL WHICH DOES NOT RESPOND TO ETCHANT THEREBY RETAINING SAID REMAINING OXIDE LAYER OF THE LIFE OF SAID MESA TRANSISTOR; AND ETCHING SAID LAYERS WITH AN ETCHANT TO FORM A MESA CONFIGURATION.
Claim 2
Independent Claim
127 words
A METHOD OF MANUFACTURE OF A MESA TRANSISTOR, COMPRISING THE STEPS OF PROVIDING A FIRST LAYER OF DETERMINED CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL; PROVIDING A SECOND LAYER OF OPPOSITE CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL ON SAID FIRST LAYER; COVERING THE SECOND LAYER WITH AN OXIDE LAYER; PROVIDING A ZONE OF SAID DETERMINED CONDUCTIVITY TYPE IN SAID SECOND LAYER; REMOVING THE OXIDE LAYER FROM SAID SECOND LAYER EXCEPT FOR AN AREA COVERING ZONE OF DETERMINED CONDUCTIVITY TYPE; COVERING THE REMAINING OXIDE LAYER AND THE AREA OF SAID SECOND LAYER SUBSTANTIALLY CIRCUMFERENTIAL TO SAID REMAINING OXIDE LAYER WITH A MATERIAL WHICH DOES NOT RESPOND TO ETCHANT THEREBY RETAINING SAID REMAINING OXIDE LAYER OF THE LIFE OF SAID MESA TRANSISTOR; AND ETCHING SAID LAYERS WITH AN ETCHANT TO FORM A MESA CONFIGURATION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-09-11 | 1971-03-13 | 1971-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-09-11 | 1975-03-13 | 1975-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-09-11 | 1979-03-13 | 1979-09-12 | $7700.00 | Window Closed / Lapsed |