Abstract 958,249. Semi-conductor circuits. TEXAS INSTRUMENTS Inc. May 6, 1960 [May 6, 1959], No. 46090/63. Divided out of 958,242. Heading H1K. The subject-matter of the Specification is included in Specification 958,242. The claims relate to a circuit comprising a monocrystalline semi-conductor wafer containing a plurality of first regions, each of which overlies a second region with which it forms a PN-junction extending to a major wafer face and there defining an enclosed area. The wafer includes an elongated portion providing a current path parallel to said face with one end connected to a bias potential and the other ohmically connected to said second regions. Input connections are provided on the first regions. Specifications 945,734, 945,737, 958,244, 958,245, 958,246, 958,247 and 958,248 also are referred to.
A CIRCUIT DEVICE COMPRISING A WAFER OF SEMICONDUCTOR MATERIAL HAVING FIRST AND SECOND REGIONS EACH WITH BOTH N- AND P-TYPE CONDUCTIVITY MATERIAL AND DEFINING A PAIR OF DIODES, A THIRD REGION DEFINING ONE ELECTRODE OF A CAPACITOR, AND A CONDUCTING FILM MOUNTED UPON SAID THIRD REGION IN CAPACITIVE RELATIONSHIP THERETO THEREBY TO CONSTITUTE THE SECOND ELECTRODE OF SAID CAPACITOR, SAID WAFER OF SEMICONDUCTOR MATERIAL SERVING TO MAKE OHMIC ELECTRICAL CONNECTION BETWEEN SAID THIRD REGION AND ONE OF THE ELECTRODES OF EACH DIODE IN SAID PAIR OF DIODES.
Claim 2
Dependent Claim
87 words
A CIRCUIT DEVICE COMPRISING A WAFER OF SEMICONDUCTOR MATERIAL HAVING FIRST AND SECOND REGIONS EACH WITH BOTH N- AND P-TYPE CONDUCTIVITY MATERIAL AND DEFINING A PAIR OF DIODES, A THIRD REGION DEFINING ONE ELECTRODE OF A CAPACITOR, AND A CONDUCTING FILM MOUNTED UPON SAID THIRD REGION IN CAPACITIVE RELATIONSHIP THERETO THEREBY TO CONSTITUTE THE SECOND ELECTRODE OF SAID CAPACITOR, SAID WAFER OF SEMICONDUCTOR MATERIAL SERVING TO MAKE OHMIC ELECTRICAL CONNECTION BETWEEN SAID THIRD REGION AND ONE OF THE ELECTRODES OF EACH DIODE IN SAID PAIR OF DIODES.