§
Luxuse
Patent Intelligence
Sign In
← Back to Patent Explorer
US3340406A Expired / Lapsed US ⏱️ 0.0 years remaining

Integrated semiconductive circuit structure

Assignee: Texas Instruments Inc
•
Filing: 1967-01-24
•
Granted: 1967-09-05
•
Expires: 1987-01-24
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract 958,249. Semi-conductor circuits. TEXAS INSTRUMENTS Inc. May 6, 1960 [May 6, 1959], No. 46090/63. Divided out of 958,242. Heading H1K. The subject-matter of the Specification is included in Specification 958,242. The claims relate to a circuit comprising a monocrystalline semi-conductor wafer containing a plurality of first regions, each of which overlies a second region with which it forms a PN-junction extending to a major wafer face and there defining an enclosed area. The wafer includes an elongated portion providing a current path parallel to said face with one end connected to a bias potential and the other ohmically connected to said second regions. Input connections are provided on the first regions. Specifications 945,734, 945,737, 958,244, 958,245, 958,246, 958,247 and 958,248 also are referred to.

Inventors

  • 👤 Jack S Kilby

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 23:37
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/26; H03K3/28; H03K3/281; H03K3/286; H03K3/288; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D99/00; H10P; H10P95/00; H10W; H10W15/00; H10W15/01; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 87 words
A CIRCUIT DEVICE COMPRISING A WAFER OF SEMICONDUCTOR MATERIAL HAVING FIRST AND SECOND REGIONS EACH WITH BOTH N- AND P-TYPE CONDUCTIVITY MATERIAL AND DEFINING A PAIR OF DIODES, A THIRD REGION DEFINING ONE ELECTRODE OF A CAPACITOR, AND A CONDUCTING FILM MOUNTED UPON SAID THIRD REGION IN CAPACITIVE RELATIONSHIP THERETO THEREBY TO CONSTITUTE THE SECOND ELECTRODE OF SAID CAPACITOR, SAID WAFER OF SEMICONDUCTOR MATERIAL SERVING TO MAKE OHMIC ELECTRICAL CONNECTION BETWEEN SAID THIRD REGION AND ONE OF THE ELECTRODES OF EACH DIODE IN SAID PAIR OF DIODES.
Claim 2
Dependent Claim 87 words
A CIRCUIT DEVICE COMPRISING A WAFER OF SEMICONDUCTOR MATERIAL HAVING FIRST AND SECOND REGIONS EACH WITH BOTH N- AND P-TYPE CONDUCTIVITY MATERIAL AND DEFINING A PAIR OF DIODES, A THIRD REGION DEFINING ONE ELECTRODE OF A CAPACITOR, AND A CONDUCTING FILM MOUNTED UPON SAID THIRD REGION IN CAPACITIVE RELATIONSHIP THERETO THEREBY TO CONSTITUTE THE SECOND ELECTRODE OF SAID CAPACITOR, SAID WAFER OF SEMICONDUCTOR MATERIAL SERVING TO MAKE OHMIC ELECTRICAL CONNECTION BETWEEN SAID THIRD REGION AND ONE OF THE ELECTRODES OF EACH DIODE IN SAID PAIR OF DIODES.

References Cited (Backward Citations)

US2875505A Cited
US2816228A Cited
US2791759A Cited
US2897377A Cited
US2898477A Cited
US2994834A Cited
US2856544A Cited
US2967952A Cited
US2911539A Cited
US3022472A Cited
US3005937A Cited
US2964648A Cited
US3029366A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1970-09-04 1971-03-06 1971-09-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1974-09-04 1975-03-06 1975-09-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1978-09-04 1979-03-06 1979-09-05 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag