Field-effect transistor having plural insulated-gate electrodes that vary space-charge voltage as a function of drain voltage

Claim 1

A SEMICONDUCTOR AMPLIFIER COMPRISING A FIELD-EFFECT TRANSISTOR WITH A BODY HAVING A CONTINUOUS ZONE OF ONE CONDUCTIVITY TYPE, A SOURCE ELECTRODE AND A DRAIN ELECTRODE CONTACTING SAID ZONE AT SPACED LOCATIONS, A FIRST GATE ELECTRODE RELATIVELY CLOSE TO SAID SOURCE ELECTRODE CONTACTING SAID BODY BETWEEN SAID SOURCE AND DRAIN ELECTRODES, SAID BODY HAVING A PORTION OF OPPOSITE CONDUCTIVITY TYPE ADJOINING AND ZONE IN AN INTERMEDIATE REGION BETWEEN SAID SOURCE AND DRAIN ELECTRODES, A DIELECTRIC LAYER ADJOINING SAID ZONE IN SAID INTERMEDIATE REGION AND CONFRONTING SAID PORTION OF OPPOSITE CONDUCTIVITY TYPE ACROSS SAID ZONE, AT LEAST ONE SECOND GATE ELECTRODE RELATIVELY REMOTE FROM SAID SOURCE ELECTRIC CONTACTING SAID LAYER IN CAPACITIVELY COUPLED RELATIONSHIP WITH SAID ZONE, A CONTROL CIRCUIT INCLUDING A SOURCE OF SIGNALS CONNECTED BETWEEN AND SOURCE ELECTRODE AND SAID FIRST GATE ELECTRODE, A LOAD CIRCUIT INCLUDING A SOURCE OF DIRECT CURRENT CONNECTED BETWEEN SAID SOURCE ELECTRODE AND SAID DRAIN ELECTRODE, AND A BIASING CIRCUIT CONNECTED BETWEEN SAID LOAD CIRCUIT AND SAID SECOND GATE ELECTRODE, SAID BIASING CIRCUIT INCLUDING A VOLTAGE DIVIDER CONNECTED ACROSS SAID DRAIN AND SOURCE ELECTRODES, SAID SECOND GATE ELECTRODE BEING CONNECTED TO AN INTERMEDIATE POINT ON SAID VOLTAGE DIVIDER WHEREBY THE POTENTIAL OF SAID SECOND GATE ELECTRODE VARIES PROPORTIONALLY WITH THAT OF SAID DRAIN ELECTRODE.