Patent US3322501A successfully refreshed from Google Patents.
US3322501A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Preparation of gallium arsenide with controlled silicon concentrations
Assignee: International Business Machines Corp
•
Filing: 1964-07-24
•
Granted: 1967-05-30
•
Expires: 1984-07-24
Abstract
No abstract record available.
Inventors
- 👤 Jerry M Woodall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:27
CPC Classifications
C; C01; C01G; C01G28/00; C30; C30B; C30B11/00; C30B29/00; C30B29/10; C30B29/40; C30B29/42; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10S117/906
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
161 words
A METHOD FOR PRODUCING SINGLE CRYSTALS OF GALLIUM ARSENIDE HAVING REDUCED SILICON CONCENTRATION COMPRISING THE STEPS OF, HEATING GALLIUM IN A SILICA VESSEL WITHIN A CLOSED SYSTEM TO A TEMPERATURE ABOVE THE MELTING POINT OF GALLIUM ARSENIDE AT WHICH GALLIUM AND ARSENIC REACT TO PRODUCE GALLIUM ARSENIDE AND AT WHICH SILICA REACTS WITH GALLIUM TO GIVE GALLOUS OXIDE AND SILICON, SIMULTANEOUSLY HEATING ARSENIC WITHIN SAID CLOSED SYSTEM IN A TEMPERATURE RANGE NEAR THE SUBLIMATION TEMPERATURE OF ARSENIC (613* C.) TO VAPORIZE SAID ARSENIC, REACTING CARBON FROM A GRAPHITE BOAT WITH A QUANITY OF GALLIC OXIDE DISPOSED THEREIN A TEMPERATURE RANGE OF 900* TO 1250*C. TO PRODUCE CARBON MONOXIDE AND AN ATMOSPHERE OF GALLOUS OXIDE TO SUPPRESS THE FORMATION OF SILICON AND, VARYING THE PRESSURE OF SAID GALLOUS OXIDE ATMOSPHERE BY VARYING THE REACTION TEMPERATURE OF SAID CARBON AND SAID GALLIC OXIDE TO CONTROL THE AMOUNT OF SILICON IN SAID GALLIUM ARSENIDE CRYSTAL PRODUCED BY CONTROLLING THE REACTION BETWEEN GALLIUM AND SILICA.
Claim 2
Independent Claim
161 words
A METHOD FOR PRODUCING SINGLE CRYSTALS OF GALLIUM ARSENIDE HAVING REDUCED SILICON CONCENTRATION COMPRISING THE STEPS OF, HEATING GALLIUM IN A SILICA VESSEL WITHIN A CLOSED SYSTEM TO A TEMPERATURE ABOVE THE MELTING POINT OF GALLIUM ARSENIDE AT WHICH GALLIUM AND ARSENIC REACT TO PRODUCE GALLIUM ARSENIDE AND AT WHICH SILICA REACTS WITH GALLIUM TO GIVE GALLOUS OXIDE AND SILICON, SIMULTANEOUSLY HEATING ARSENIC WITHIN SAID CLOSED SYSTEM IN A TEMPERATURE RANGE NEAR THE SUBLIMATION TEMPERATURE OF ARSENIC (613* C.) TO VAPORIZE SAID ARSENIC, REACTING CARBON FROM A GRAPHITE BOAT WITH A QUANITY OF GALLIC OXIDE DISPOSED THEREIN A TEMPERATURE RANGE OF 900* TO 1250*C. TO PRODUCE CARBON MONOXIDE AND AN ATMOSPHERE OF GALLOUS OXIDE TO SUPPRESS THE FORMATION OF SILICON AND, VARYING THE PRESSURE OF SAID GALLOUS OXIDE ATMOSPHERE BY VARYING THE REACTION TEMPERATURE OF SAID CARBON AND SAID GALLIC OXIDE TO CONTROL THE AMOUNT OF SILICON IN SAID GALLIUM ARSENIDE CRYSTAL PRODUCED BY CONTROLLING THE REACTION BETWEEN GALLIUM AND SILICA.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-05-29 | 1970-11-28 | 1971-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-05-29 | 1974-11-28 | 1975-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-05-29 | 1978-11-28 | 1979-05-30 | $7700.00 | Window Closed / Lapsed |