Patent US3321682A successfully refreshed from Google Patents.
US3321682A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Group iii-v compound transistor
Assignee: RCA Corp
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Filing: 1966-04-14
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Granted: 1967-05-23
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Expires: 1986-04-14
Abstract
No abstract record available.
Inventors
- 👤 Doris W Flatley
- 👤 Hans W Becke
- 👤 Stolnitz Daniel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:47
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
178 words
A TRANSISTOR COMPRISING: AN N TYPE CRYSTALLINE SEMICONDUCTIVE BODY HAVING AT LEAST ONE MAJOR FACE, SAID BODY CONSISTING OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF THE PHOSPHIDES, ARSENIDES AND ANTIMONIDES OF BORON, ALUMINUM, GALLIUM AND INDIUM; A P TYPE BASE ZONE IN SAID BODY IMMEDIATELY ADJACENT SAID MAJOR FACE, SAID ZONE BEING ABOUT 0.4 MICRON THICK AND CONTAINING A NET EXCESS OF ZINC ATOMS OVER N TYPE IMPURI-TY ATOMS, SAID EXCESS BEING LESS THAN 5X10**17 ZINC ATOMS PER CM.3 AT SAID ONE MAJOR FACE; A RECTIFYING BARRIER BETWEEN SAID P TYPE ZONE AND SAID N TYPE BODY; AN N TYPE EMITTER REGION IN SAID BODY IMMEDIATELY ADJACENT SAID ONE FACE, SAID N TYUPE REGION BEING COMPLETELY SURROUNDED BY SAID P TYPE ZONE, THE CONCENTRATION OF DONOR ATOMS IN SAID EMITTER REGION BEING ABOUT 1X10**19 ATOMS PER CM.3; A RECTIFYING BARRIER BETWEEN SAID N TYPE EMITTER REGION AND SAID P TYPE BASE ZONE; A METALLIC CONTACT TO SAID N TYPE EMITTER REGION; A METALLIC CONTACT TO SAID P TYPE BASE ZONE; AND, ELECTRICAL CONNECTIONS TO SAID CONTACTS,
Claim 2
Dependent Claim
178 words
A TRANSISTOR COMPRISING: AN N TYPE CRYSTALLINE SEMICONDUCTIVE BODY HAVING AT LEAST ONE MAJOR FACE, SAID BODY CONSISTING OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF THE PHOSPHIDES, ARSENIDES AND ANTIMONIDES OF BORON, ALUMINUM, GALLIUM AND INDIUM; A P TYPE BASE ZONE IN SAID BODY IMMEDIATELY ADJACENT SAID MAJOR FACE, SAID ZONE BEING ABOUT 0.4 MICRON THICK AND CONTAINING A NET EXCESS OF ZINC ATOMS OVER N TYPE IMPURI-TY ATOMS, SAID EXCESS BEING LESS THAN 5X10**17 ZINC ATOMS PER CM.3 AT SAID ONE MAJOR FACE; A RECTIFYING BARRIER BETWEEN SAID P TYPE ZONE AND SAID N TYPE BODY; AN N TYPE EMITTER REGION IN SAID BODY IMMEDIATELY ADJACENT SAID ONE FACE, SAID N TYUPE REGION BEING COMPLETELY SURROUNDED BY SAID P TYPE ZONE, THE CONCENTRATION OF DONOR ATOMS IN SAID EMITTER REGION BEING ABOUT 1X10**19 ATOMS PER CM.3; A RECTIFYING BARRIER BETWEEN SAID N TYPE EMITTER REGION AND SAID P TYPE BASE ZONE; A METALLIC CONTACT TO SAID N TYPE EMITTER REGION; A METALLIC CONTACT TO SAID P TYPE BASE ZONE; AND, ELECTRICAL CONNECTIONS TO SAID CONTACTS,
References Cited (Backward Citations)
US3131096A
Cited
US3060327A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-05-22 | 1970-11-21 | 1971-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-05-22 | 1974-11-21 | 1975-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-05-22 | 1978-11-21 | 1979-05-23 | $7700.00 | Window Closed / Lapsed |