Method of fabricating a semiconductor by out-diffusion

Claim 1

A PROCESS FOR TREATING A MONOCRYSTALLINE SEMICONDUCTOR BODY HAVING FIRST AND SECOND REGIONS OF GIVEN AND OPPOSITE RESPECTIVE CONDUCTIVITY TYPES WITH A P-N JUNCTION THEREBETWEEN, AT LEAST A PORTION OF SAID JUNCTION BEING DISPOSED AT A PREDETERMINED DEPTH FROM A GIVEN SURFACE OF SAID BODY, AT LEAST ONE OF SAID REGIONS CONTAINING A CONDUCTIVITYTYPE-DETERMINING IMPURITY MATERIAL, SAID BODY CONTAINING AT LEAST ONE NON-SIGNIFICANT IMPURITY MATERIAL THE PRESENCE OF WHICH IN EITHER OF SAID REGIONS HAS NO SUBSTANTIAL EFFECT ON THE CONDUCTIVITY TYPE THEREOF, THE DIFFUSION CONSTANT OF SAID NON-SIGNIFICANT-IMPURITY MATERIAL IN SAID SEMICONDUCTOR BODY AT A GIVEN TEMPERATURE BEING SUBSTANTIALLY GREATER THAN THE DIFFUSION CONSTANT OF SAID CONDUCTIVITY-TYPE-DETERMINING IMPURITY MATERIAL IN SAID SEMICONDUCTOR BODY AT SAID TEMPERATURE, COMPRISING THE STEPS OF: FORMING A DISTRUBED REGION WITHIN SAID BODY HAVING A RELATIVELY HIGH CONCENTRATION OF LATTICE DEFECTS AT A PREDETERMINED DISTANCE FROM SAID P-N JUNCTION PORTION; AND HEATING SAID SEMICONDUCTOR BODY TO SAID GIVEN TEMPERATURE FOR A GIVEN TIME SUCH THAT THE DISTRIBUTION OF SAID AT LEAST OEN NON-SIGNIFICANT IMPURITY WITHIN SAID BODY IS SUBSTANTIALLY MODIFIED WHILE THE DISTRIBUTION OF SAID AT LEAST ONE CONDUCTIVITY-TYPE DETERMINING IMPURITY WITHIN SAID BODY REMAINS RELATIVELY UNAFFECTED.