Patent US3317359A successfully refreshed from Google Patents.
US3317359A
Expired / Lapsed
US
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Method of forming a transistor by diffusing recombination centers and device produced thereby
Assignee: Telefunken AG
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Filing: 1965-05-05
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Granted: 1967-05-02
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Expires: 1985-05-05
Abstract
No abstract record available.
Inventors
- 👤 Engbert Wilhelm
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:12
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/60; G; G01; G01L; G01L1/00; G01L1/18; H10D10/00; H10D99/00; H10P; H10P32/00; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/062; Y10S438/00; Y10S438/914; Y10S438/917
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
31 words
IN A METHOD OF MAKING A TRANSISTOR HAVING A BASE ZONE, THE STEP OF DIFFUSING RECOMBINATION CENTERS INTO SAID BASE ZONE FROM AN EMITTER OR COLLECTOR ZONE ADJACENT SAID BASE ZONE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-05-01 | 1970-10-31 | 1971-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-05-01 | 1974-10-31 | 1975-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-05-01 | 1978-10-31 | 1979-05-02 | $7700.00 | Window Closed / Lapsed |