Abstract 1,079,323. Silicon - ceramic seals; soldering. UNITED AIRCRAFT CORPORATION. Dec. 14, 1965 [Dec. 30, 1964], No. 53119/65. Headings B3R and B3V. A silicon semi-conductor is bonded to a ceramic substrate by depositing a gold film on the substrate, positioning the semi-conductor on the film, and heating the assembly to form a gold-silicon eutectic. The assembly can be subjected to pressure and agitation while heated to a temperature of 425‹ C. Alternatively, a jet of hydrogen at 450‹ C. can be impinged on the assembly after heating the assembly to 300‹ C. Both the substrate and silicon can be cleaned prior to bonding by agitating them ultrasonically in an alcohol solution, the semi-conductor then being placed in a hydrofluoric acid bath.
A METHOD FOR THE BONDING OF SILICON TO A CERAMIC COMPRISING: DEPOSITING A GOLD FILM ON A SURFACE OF A CERAMIC BODY, PLACING A SILICON CHIP ON THE DEPOSITED GOLD FILM, AND RAISING THE TEMPERATURE OF THE ASSEMBLY TO THE EXTENT NECESSARY FOR THE FORMATION OF A GOLD-SILICON EUTECTIC.
Claim 2
Independent Claim
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A METHOD FOR THE BONDING OF SILICON TO A CERAMIC COMPRISING: DEPOSITING A GOLD FILM ON A SURFACE OF A CERAMIC BODY, PLACING A SILICON CHIP ON THE DEPOSITED GOLD FILM, AND RAISING THE TEMPERATURE OF THE ASSEMBLY TO THE EXTENT NECESSARY FOR THE FORMATION OF A GOLD-SILICON EUTECTIC.