US3309244A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Alloy-diffused method for producing semiconductor devices
Assignee: Motorola Solutions Inc
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Filing: 1963-03-22
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Granted: 1967-03-14
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Expires: 1983-03-22
Abstract
No abstract record available.
Inventors
- 👤 Charles B Ackerman
- 👤 Daniel J Sullivan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:51
CPC Classifications
H; H10; H10W; H10W99/00; H10D; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/16; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/035
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
185 words
A METHOD OF MAKING TRANSISTOR STRUCTURES, COMPRISING THE STEPS OF ALLOYING IMPURITY-BEARING METAL WITH A SEMICONDUCTOR WAFER AT ONE SIDE THEREOF TO FORM A THIN ALLOY REGROWTH LAYER IN SAID WAFER IN WHICH IMPURITY MATERIAL OF ONE CONDUCTIVITY TYPE PREDOMINATES, FUSING AN IMPURITY ELEMENT CONTAINING BOTH DONOR AND ACCEPTOR IMPURITY MATERIALS TO SAID REGROWTH LAYER TO FORM AN ALLOYED ELECTRODE INCLUDING A REGROWTH REGION WHICH EXTENDS THROUGH SAID LAYER, HE IMPURITY MATERIAL IN SAID ELEMENT OF THE CONDUCTIVITY TYPE OPPOSITE TO THAT PREDOMINATING IN SAID REGROWTH LAYER HAVING A HIGHER SEGREGATION COEFFICIENT AND A LOWER DIFFUSION CONSTANT THAN THE OTHER IMPURITY MATERIAL IN SAID ELEMENT SO THAT SAID REGROWTH REGION OF SAID ELECTRODE IS OF SAID OPPOSITE CONDUCTIVITY TYPE, DIFFUSING IMPURITIES FROM SAID REGROWTH REGION INTO SAID LAYER AND INTO THE MATERIAL OF SAID WAFER ADJOINING SAID REGROWTH REGION UNDER SAID LAYER TO FORM THERE A THIN DIFFUSED BASE REGION IN WHICH SAID OTHER IMPURITY MATERIAL PREDOMINATES AND WHICH MERGES INTO SAID REGROWTH LAYER, AND PROVIDING ELECTRICAL CONNECTIONS RESPECTIVELY TO SAID REGROWTH LAYER AND TO SAID ELECTRODE AND TO THE BULK MATERIAL OF SAID WAFER.
Claim 2
Independent Claim
185 words
A METHOD OF MAKING TRANSISTOR STRUCTURES, COMPRISING THE STEPS OF ALLOYING IMPURITY-BEARING METAL WITH A SEMICONDUCTOR WAFER AT ONE SIDE THEREOF TO FORM A THIN ALLOY REGROWTH LAYER IN SAID WAFER IN WHICH IMPURITY MATERIAL OF ONE CONDUCTIVITY TYPE PREDOMINATES, FUSING AN IMPURITY ELEMENT CONTAINING BOTH DONOR AND ACCEPTOR IMPURITY MATERIALS TO SAID REGROWTH LAYER TO FORM AN ALLOYED ELECTRODE INCLUDING A REGROWTH REGION WHICH EXTENDS THROUGH SAID LAYER, HE IMPURITY MATERIAL IN SAID ELEMENT OF THE CONDUCTIVITY TYPE OPPOSITE TO THAT PREDOMINATING IN SAID REGROWTH LAYER HAVING A HIGHER SEGREGATION COEFFICIENT AND A LOWER DIFFUSION CONSTANT THAN THE OTHER IMPURITY MATERIAL IN SAID ELEMENT SO THAT SAID REGROWTH REGION OF SAID ELECTRODE IS OF SAID OPPOSITE CONDUCTIVITY TYPE, DIFFUSING IMPURITIES FROM SAID REGROWTH REGION INTO SAID LAYER AND INTO THE MATERIAL OF SAID WAFER ADJOINING SAID REGROWTH REGION UNDER SAID LAYER TO FORM THERE A THIN DIFFUSED BASE REGION IN WHICH SAID OTHER IMPURITY MATERIAL PREDOMINATES AND WHICH MERGES INTO SAID REGROWTH LAYER, AND PROVIDING ELECTRICAL CONNECTIONS RESPECTIVELY TO SAID REGROWTH LAYER AND TO SAID ELECTRODE AND TO THE BULK MATERIAL OF SAID WAFER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-03-13 | 1970-09-12 | 1971-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-03-13 | 1974-09-12 | 1975-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-03-13 | 1978-09-12 | 1979-03-14 | $7700.00 | Window Closed / Lapsed |