US3216871A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making silicon alloydiffused semiconductor device
Assignee: US Philips Corp
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Filing: 1961-10-17
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Granted: 1965-11-09
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Expires: 1981-10-17
Abstract
No abstract record available.
Inventors
- 👤 Kooi Else
- 👤 Aant Bouwe Daniel Van Der Meer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:51
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; C; C22; C22C; C22C13/00; H10D; H10D10/00; H10P; H10P32/00; H10P32/10; H10P32/16; H10P95/00; H10P95/50; H10W72/00; H10W76/00; H10W76/60; H10W99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
158 words
IN A METHOD OF MANUFACTURING AN ALLOY-DIFFUSED SILICON SEMICONDUCTOR DEVICE, WHEREIN A MASS OF ELECTRODE MATERIAL IS HEATED AND MELTED IN CONTACT WITH A SILICON PORTION OF A SEMI-CONDUCTIVE BODY IN THE PRESENCE OF AN ACTIVE DIFFUSING ACCEPTOR IMPURITY AND AN ACTIVE SEGREGATING DONOR IMPURITY WHICH ARE PROVIDED IN THE MELT, WITH THE ACCEPTOR HAVING A HIGHER DIFFUSION VELOCITY IN THE SILICON THAN THE DONOR, AND THE ACCEPTOR IS DIFFUSED INTO THE BODY FROM THE MELT AT A TEMPERATURE EXCEEDING 1000*C. FORMING UNDERNEATH THE MASS A P-TYPE DIFFUSED LAYER, BUT WHEN THE MELT IS COOLED, THE DONOR DOMINATES FORMING ADJACENT THE P-TYPE DIFFUSED LAYER AN N-TYPE RECRYSTALLIZED LAYER ON WHICH IS SOLIDIFIED THE REMAINING ELECTRODE MATERIAL AS A CONTACT THERETO, IN COMBINATION THEREWITH THE IMPROVEMENT COMPRISING, BEFORE THE ACCEPTOR IS DIFFUSED INTO THE BODY, ADDING AT LEAST ONE OF THE ACTIVE ACCEPTOR AND DONOR IMPURITIES TO THE ELECTRODE MATERIAL MELT SUBSTANTIALLY ONLY AFTER THE LATTER HAS BEEN MELTED.
Claim 2
Dependent Claim
158 words
IN A METHOD OF MANUFACTURING AN ALLOY-DIFFUSED SILICON SEMICONDUCTOR DEVICE, WHEREIN A MASS OF ELECTRODE MATERIAL IS HEATED AND MELTED IN CONTACT WITH A SILICON PORTION OF A SEMI-CONDUCTIVE BODY IN THE PRESENCE OF AN ACTIVE DIFFUSING ACCEPTOR IMPURITY AND AN ACTIVE SEGREGATING DONOR IMPURITY WHICH ARE PROVIDED IN THE MELT, WITH THE ACCEPTOR HAVING A HIGHER DIFFUSION VELOCITY IN THE SILICON THAN THE DONOR, AND THE ACCEPTOR IS DIFFUSED INTO THE BODY FROM THE MELT AT A TEMPERATURE EXCEEDING 1000*C. FORMING UNDERNEATH THE MASS A P-TYPE DIFFUSED LAYER, BUT WHEN THE MELT IS COOLED, THE DONOR DOMINATES FORMING ADJACENT THE P-TYPE DIFFUSED LAYER AN N-TYPE RECRYSTALLIZED LAYER ON WHICH IS SOLIDIFIED THE REMAINING ELECTRODE MATERIAL AS A CONTACT THERETO, IN COMBINATION THEREWITH THE IMPROVEMENT COMPRISING, BEFORE THE ACCEPTOR IS DIFFUSED INTO THE BODY, ADDING AT LEAST ONE OF THE ACTIVE ACCEPTOR AND DONOR IMPURITIES TO THE ELECTRODE MATERIAL MELT SUBSTANTIALLY ONLY AFTER THE LATTER HAS BEEN MELTED.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-11-08 | 1969-05-10 | 1969-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-11-08 | 1973-05-10 | 1973-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-11-08 | 1977-05-10 | 1977-11-09 | $7700.00 | Window Closed / Lapsed |