Semiconductor switch devices

Claim 1

A MULTIPLE-ZONE SEMICONDUCTOR DEVICE COMPRISING A CRYSTAL OF SEMICONDUCTOR MATERIAL OF ONE TYPE OF CONDUCTIVITY HAVING A SURFACE ADAPTED TO RECEIVE IMPURITY MATERIAL TO FORM P-N JUNCTIONS, A FIRST RELATIVELY LARGE-AREA REGION OF SEMICONDUCTOR MATERIAL OF OPPOSITE CONDUCTIVITY TYPE IN SAID SURFACE OF SAID CRYSTAL, A SECOND REGIOIN OF SAID OPPOSITE CONDUCTIVITY TYPE FORMED IN SAID SURFACE OF SAID CRYSTAL INSIDE THE AREA DEFINED BY SAID FIRST REGION AND SURROUNDED BY A REGION OF MATERIAL OF SAID FIRST CONDUCTIVITY TYPE, A THIRD REGION OF SAID ONE CONDUCTIVITY TYPE FORMED INSIDE THE AREA DEFINED BY SAID FIRST REGION, A FOURTH REGION OF SAID ONE TYPE OF CONDUCTIVITY FORMED IN SAID SURFACE OF SAID CRYSTAL, SAID FIRST, SECOND, THIRD, AND FOURTH REGIONS BEING SHAPED AND ORIENTED SO THAT THEY, IN EFFECT, DEFINE THE FOUR CORNERS OF A RECTANGLE ON SAID SURFACE OF SAID CRYSTAL, A LAYER OF INSULASTING MATERIAL OVER THE ENTIRE SURFACE OF SAID CRYSTAL AND ALL OF THE REGIONS OF DIFFERENT TYPES FORMED THEREIN, AND AN OHMIC ELECTRICAL CONTACT THROUGH SAID INSULATING LAYER TO SAID FIRST, SECOND, THIRD, AND FOURTH REGIONS, SAID CONTACTS COMPRISING RELATIVELY LARGE MASSES OF METAL RISING ABOVE SAID LAYER OF INSULATING MATERIAL WHEREBY CONTACT MAY BE READILY MADE THERETO.