Semiconductor device complex

Claim 1

A TRANSISTOR COMPLEX CONTAINING A PLURALITY OF TRANSISTORS FABRICATED IN A SINGLE BODY OF SEMICONDUCTOR MATERIAL, AT LEAST ONE OF WHICH TRANSISTORS BEING DEFECTIVE, WHICH COMPRISES A BODY OF SEMICONDUCTOR MATERIAL, THE BULK OF SAID BODY BEING A COLLECTOR OF ONE CONDUCTIVITY TYPE, SAID BODY CONTAINING A PLURALITY OF BASE LAYERS OF THE OPPOSITE CONDUCTIVITY TYPE WITH A SURFACE OF EACH EXPOSED AT A FIRST SURFACE OF SAID BODY, SAID BASE LAYERS BEING CONTIGUOUS TO SAID COLLECTOR, SAID BODY ALSO CONTAINING A PLURALITY OF EMITTER LAYERS OF THE SAME CONDUCTIVITY TYPE AS SAID COLLECTOR WITH A SURFACE OF EACH EXPOSED AT THE SAID SURFACE OF THE BODY, EACH OF SAID EMITTER LAYERS BEING CONTIGUOUS TO ONE OF SAID BASE LAYERS AND SEPARATE FROM ONE ANOTHER, AND AT LEAST ONE OF SAID TRANSISTORS BEING DEFECTIVE, AN INSULATIVE LAYER INTIMATELY OVERLYING THE SURFACE OF SAID BODY WITH OPENINGS THEREIN EXPOSING THE RESPECTIVE SURFACE OF SAID EMITTER AND BASE LAYERS, A PAIR OF CONDUCTORS INTIMATELY OVERLYING SAID INSULATIVE LAYER AND EACH HAVING RESPECTIVE DISCRETE LEADS CONNECTED TO SAID EMITTER AND BASE LAYERS THROUGH SAID OPENINGS, WITH THE LEAD CONNECTION TO AT LEAST ONE OF THE EMITTER AND BASE LAYERS OF SAID DEFECTIVE TRANSISTOR BEING BROKEN FOR ISOLATING SAID DEFECTIVE TRANSISTOR FROM SAID NON-DEFECTIVE TRANSISTORS.