Semiconductor device fabrication

Claim 1

THE METHOD OF FABRICATING A SEMICONDUCTOR DEVICE COMPRISING: FORMING A SANDWICH CONSISTING OF A METALLIC LAYER BONDED BETWEEN TWO SEMICONDUCTOR LAYERS, SAID METALLIC LAYER HAVING A MELTING POINT LOWER THAN THAT OF SAID TWO SEMICONDUCTOR LAYERS AND BEING CAPABLE, WHEN MOLTEN OF DISSOLVING A PORTION OF SAID SEMICONDUCTOR LAYERS; MAINTAINING A TEMPERATURE DIFFERENTIAL BETWEEN TWO ENDS OF SAID SANDWICH TO ESTABLISH A TEMPERATURE GRADIENT PARALLEL TO THE PLANE OF SAID SANDWICH WHILE HEATING SAID SANDWICH TO A TEMPERATURE ABOVE THE MELTING POINT OF SAID METALLIC LAYER BUT BELOW THE MELTING POINT OF SAID SEMICONDUCTOR LAYERS, SAID HEATING STEP BEING PERFORMED FOR A PERIOD OF TIME SUFFICIENT FOR SAID METALLIC LAYER TO COLLECT AT THE HOT END OF SAID SANDWICH; COOLING SAID SANDWICH TO ROOM TEMPERATURE; AND REMOVING THAT END OF SAID SANDWICH IN WICH SAID METALLIC LAYER HAS COLLECTED.