Semiconductor structures providing both unipolar transistor and bipolar transistor functions and method of making same

Claim 1

A SEMICONDUCTOR STRUCTURE CAPABLE OF PROVIDING THE FUNCTIONS OF A UNIPOLAR TRANSISTOR AND A BIPOLAR TRANSISTOR COMPRISING: A UNITARY BODY OF SEMICONDUCTIVE MATERIAL INCLUDING A SUBSTRATE OF A FIRST TYPE OF SEMICONDUCTIVITY; A FIRST REGION OF SEMICONDUCTIVE MATERIAL OF A SECOND TYPE OF SEMICONDUCTIVITY IN A PORTION OF A FIRST SURFACE OF SAID SUBSTRATE AND FORMING A P-N JUNCTION THEREWITH; A LAYER OF SEMICONDUCTIVE MATERIAL OF SAID FIRST TYPE OF SEMICONDUCTIVITY EXTENDING OVER SAID FIRST REGION AND SAID FIRST SURFACE OF SAID SUBSTRATE OUTSIDE SAID FIRST REGION; AN ISOLATION WALL OF SEMICONDUCTIVE MATERIAL OF SAID SECOND TYPE OF SEMICONDUCTIVITY EXTENDING FROM SAID FIRST REGION THROUGH SAID LAYER AND ENCLOSING A FIRST PORTION THEREOF; A SECOND REGION OF SEMICONDUCTIVE MATERIAL OF SAID SECOND TYPE DISPOSED IN P-N JUNCTION FORMING RELATIONSHIP WITH SAID FIRST PORTION OF SAID LAYER; A THIRD REGION OF SEMICONDUCTIVE MATERIAL OF SAID SECOND TYPE DISPOSED IN P-N JUNCTION FORMING RELATIONSHIP WITH A SECOND PORTION OF SAID LAYER; AND A FOURTH REGION OF SEMICONDUCTIVE MATERIAL OF SAID FIRST TYPE OF SEMICONDUCTIVITY DISPOSED IN P-N JUNCTION FORMING RELATIONSHIP WITH SAID THIRD REGION SO THAT SAID FIRST PORTION OF SAID LAYER AND SAID FIRST AND SECOND REGIONS OF SEMICONDUCTIVE MATERIAL FORM A SEMICONDUCTIVE STRUCTURE CAPABLE OF OPERATING AS A UNIPOLAR TRANSISTOR AND SAID SECOND PORTION OF SAID LAYER AND SAID THIRD AND FOURTH SEMICONDUCTIVE REGIONS FORM A STRUCTURE CAPABLE OF OPERATING AS A BIPOLAR TRANSISTOR.