US3295185A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Contacting of p-nu junctions
Assignee: Westinghouse Electric Corp
•
Filing: 1963-10-15
•
Granted: 1967-01-03
•
Expires: 1983-10-15
Abstract
No abstract record available.
Inventors
- 👤 Pritchard Colin
- 👤 Pergola Gian C Della
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:59
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; H10W72/59; H10W72/90; H10W72/931; H10W72/932
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
128 words
A PROCESS FOR FORMING A P-N JUNCTION IN A BODY OF SEMICONDUCTOR MATERIAL AND MAKING ELECTRICAL CONTACT THEREWITH CONSISTING OF (1) APPLYING AN UNBROKEN LAYER OF AN INSULATING MATERIAL TO A SURFACE OF A BODY OF SEMICONDUCTOR MATERIAL HAVING A FIRST SEMICONDUCTIVITY, (2) APPLYING AN UNBROKEN LAYER OF AN ELECTRICALLY CONDUCTIVE UPON ALLOYING WITH THE SEMICONDUCTOR MATERIAL WILL PRODUCE A P-N JUNCTION THEREIN, (3) THEREAFTER LOCALLY ALLOYING ONLY A SELECTED AREA OF SAID MATERIAL WITH THE BODY OF SEMICONDUCTIVE MATERIAL BY LOCALIZED FUSHION DIRECTLY THROUGH THE UNDERLYING PORTION OF SAID INSULATION TO FORM A P-N JUNCTION IN THE BODY OF SEMICONDUCTOR MATERIAL, AND (4) THEN ATTACHING AN ELECTRICAL LEAD TO THE REMAINDER OF THE LAYER OF SAID MATERIAL WHEREBY ELECTRICAL CONTACT IS PROVIDED WITH THE ALLOYED P-N JUNCTION.
Claim 2
Dependent Claim
128 words
A PROCESS FOR FORMING A P-N JUNCTION IN A BODY OF SEMICONDUCTOR MATERIAL AND MAKING ELECTRICAL CONTACT THEREWITH CONSISTING OF (1) APPLYING AN UNBROKEN LAYER OF AN INSULATING MATERIAL TO A SURFACE OF A BODY OF SEMICONDUCTOR MATERIAL HAVING A FIRST SEMICONDUCTIVITY, (2) APPLYING AN UNBROKEN LAYER OF AN ELECTRICALLY CONDUCTIVE UPON ALLOYING WITH THE SEMICONDUCTOR MATERIAL WILL PRODUCE A P-N JUNCTION THEREIN, (3) THEREAFTER LOCALLY ALLOYING ONLY A SELECTED AREA OF SAID MATERIAL WITH THE BODY OF SEMICONDUCTIVE MATERIAL BY LOCALIZED FUSHION DIRECTLY THROUGH THE UNDERLYING PORTION OF SAID INSULATION TO FORM A P-N JUNCTION IN THE BODY OF SEMICONDUCTOR MATERIAL, AND (4) THEN ATTACHING AN ELECTRICAL LEAD TO THE REMAINDER OF THE LAYER OF SAID MATERIAL WHEREBY ELECTRICAL CONTACT IS PROVIDED WITH THE ALLOYED P-N JUNCTION.
References Cited (Backward Citations)
US2805968A
Cited
US2944321A
Cited
US3169892A
Cited
US3080481A
Cited
US3044147A
Cited
US2981877A
Cited
US3179542A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-01-02 | 1970-07-04 | 1971-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-01-02 | 1974-07-04 | 1975-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-01-02 | 1978-07-04 | 1979-01-03 | $7700.00 | Window Closed / Lapsed |