US2805968A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices and method of making same
Assignee: RCA Corp
•
Filing: 1956-02-08
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Granted: 1957-09-10
•
Expires: 1976-02-08
Abstract
No abstract record available.
Inventors
- 👤 Jr George Edgar Dunn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 03:29
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10P; H10P95/00; H10W72/00; H10W74/43
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
55 words
THE METHOD OF FABRICATING AN ELECTRICAL JUNCTION DEVICE-COMPRISING THE STEPS OF APPLYING TO ONE PORTION OF A SURFACE OF A CRYSTAL SEMICONDUCTOR WAFER A THIN ADHERENT AND COHERENT FILM OF MAGNESIUM HYDROXIDE, AND APPLYING TO THE ADJACENT FILM-FREE SURFACE A QUANTITY OF ELECTRODE MATERIAL, AND TREATING SAID ELECTRODE MATERIAL TO FORM A RECTIFYING BARRIER THEREBENEATH.
Claim 2
Independent Claim
55 words
THE METHOD OF FABRICATING AN ELECTRICAL JUNCTION DEVICE-COMPRISING THE STEPS OF APPLYING TO ONE PORTION OF A SURFACE OF A CRYSTAL SEMICONDUCTOR WAFER A THIN ADHERENT AND COHERENT FILM OF MAGNESIUM HYDROXIDE, AND APPLYING TO THE ADJACENT FILM-FREE SURFACE A QUANTITY OF ELECTRODE MATERIAL, AND TREATING SAID ELECTRODE MATERIAL TO FORM A RECTIFYING BARRIER THEREBENEATH.
References Cited (Backward Citations)
US1951945A
Cited
US2597028A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-09-09 | 1961-03-11 | 1961-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-09-09 | 1965-03-11 | 1965-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-09-09 | 1969-03-11 | 1969-09-10 | $7700.00 | Window Closed / Lapsed |