Patent US3293584A successfully refreshed from Google Patents.
US3293584A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Strain transducer transistor
Assignee: Raytheon Co
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Filing: 1964-08-10
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Granted: 1966-12-20
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Expires: 1984-08-10
Abstract
No abstract record available.
Inventors
- 👤 Wilhelm H Legat
- 👤 Lewis K Russell
- 👤 Alan F Dixon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:48
CPC Classifications
H; H10; H10D; H10D99/00; G; G01; G01L; G01L1/00; G01L1/18; H10D48/00; H10D48/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
131 words
A STRAIN TRANSDUCER TRANSISTOR COMPRISING: (A) AN AXIALLY EXTENDING SEMICONDUCTOR BODY HAVING A FIRST SUBSTRATE LAYER OF SELECTED CONDUCTIVITY TYPE, A SECOND LAYER OF OPPOSITE CONDUCTIVITY TYPE OVERLYING ONE SIDE OF THE FIRST LAYER, AND A THIRD LAYER OF OPPOSITE CONDUCTIVITY TYPE OVERLYING THE OPPOSITE SIDE OF THE FIRST LAYER, SAID SECOND AND THIRD LAYERS HAVING RESPECTIVE PARALLEL FIRST AND SECOND PLANAR SURFACES, AND PARALLE FIRST AND SECOND P-N JUNCTIONS THEREIN BETWEEN SAID FRIST LAYER AND THE RESPECTIVE SECOND AND THIRD LAYERS AND EXTENDING IN PLANES PARALLEL WITH SAID FIRST AND SECOND SURFACES RESPECTIVELY, (B) SAID SECOND SURFACE OF SAID SEMICONDUCTOR BODY HAVING A GROOVE EXTENDING TRANSVERSELY THEREACROSS AND INTO SAID THIRD LAYER AND TERMINATING SHORT OF SAID SECOND JUNCTION AND ORIENTED PERPENDICULAR TO THE AXIS OF SAID SEMICONDUCTOR BODY, AND
Claim 2
Dependent Claim
131 words
A STRAIN TRANSDUCER TRANSISTOR COMPRISING: (A) AN AXIALLY EXTENDING SEMICONDUCTOR BODY HAVING A FIRST SUBSTRATE LAYER OF SELECTED CONDUCTIVITY TYPE, A SECOND LAYER OF OPPOSITE CONDUCTIVITY TYPE OVERLYING ONE SIDE OF THE FIRST LAYER, AND A THIRD LAYER OF OPPOSITE CONDUCTIVITY TYPE OVERLYING THE OPPOSITE SIDE OF THE FIRST LAYER, SAID SECOND AND THIRD LAYERS HAVING RESPECTIVE PARALLEL FIRST AND SECOND PLANAR SURFACES, AND PARALLE FIRST AND SECOND P-N JUNCTIONS THEREIN BETWEEN SAID FRIST LAYER AND THE RESPECTIVE SECOND AND THIRD LAYERS AND EXTENDING IN PLANES PARALLEL WITH SAID FIRST AND SECOND SURFACES RESPECTIVELY, (B) SAID SECOND SURFACE OF SAID SEMICONDUCTOR BODY HAVING A GROOVE EXTENDING TRANSVERSELY THEREACROSS AND INTO SAID THIRD LAYER AND TERMINATING SHORT OF SAID SECOND JUNCTION AND ORIENTED PERPENDICULAR TO THE AXIS OF SAID SEMICONDUCTOR BODY, AND
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-12-19 | 1970-06-20 | 1970-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-12-19 | 1974-06-20 | 1974-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-12-19 | 1978-06-20 | 1978-12-20 | $7700.00 | Window Closed / Lapsed |