Patent US3293092A successfully refreshed from Google Patents.
US3293092A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device fabrication
Assignee: International Business Machines Corp
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Filing: 1964-03-17
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Granted: 1966-12-20
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Expires: 1984-03-17
Abstract
No abstract record available.
Inventors
- 👤 John B Gunn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:22
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; H10D; H10D99/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
135 words
A METHOD OF MAKING SEMICONDUCTOR DEVICES INCLUDING THE FABRICATION OF A SEMICONDUCTOR JUNCTION OF SMALL AREA COMPRISING, DEPOSITING AT LEAST ONE THIN LAYER OF FIRST SEMICONDUCTOR MATERIAL HAVING A FIRST BAND GAP UPON A SUBSTRATE OF SECOND SEMICONDUCTOR MATERIAL HAVING A SECOND BAND GAP TO FORM A JUNCTION THEREBETWEEN, APPLYING A DOT OF ETCH-RESISTANT MATERIAL TO COVER A PORTION OF SAID ONE THIN LAYER, ETCHING THE ENTIRE STRUCTURE THUS FORMED WITH AN ETCHANT EFFECTIVE TO DISSOLVE SUBSTANTIALLY ONLY SAID FIRST SEMICONDUCTOR MATERIAL SUCH AS TO REMOVE ALL OF SAID ONE THIN LAYER FROM SAID SUBSTRATE EXCEPT FOR THAT PORTION UNDERLYING SAID DOT OF ETCH-RESISTANT MATERIAL, AND CONTINUING SAID LAST-MENTIONED STEP TO PURPOSEFULLY DISSOLVE SAID UNDERLYING PORTION OF SAID ONE THIN LAYER EXCEPT FOR A SMALL PART THEREOF DEFINING SAID SMALL AREA JUNCTION WITH SAID SUBSTRATE.
Claim 2
Independent Claim
135 words
A METHOD OF MAKING SEMICONDUCTOR DEVICES INCLUDING THE FABRICATION OF A SEMICONDUCTOR JUNCTION OF SMALL AREA COMPRISING, DEPOSITING AT LEAST ONE THIN LAYER OF FIRST SEMICONDUCTOR MATERIAL HAVING A FIRST BAND GAP UPON A SUBSTRATE OF SECOND SEMICONDUCTOR MATERIAL HAVING A SECOND BAND GAP TO FORM A JUNCTION THEREBETWEEN, APPLYING A DOT OF ETCH-RESISTANT MATERIAL TO COVER A PORTION OF SAID ONE THIN LAYER, ETCHING THE ENTIRE STRUCTURE THUS FORMED WITH AN ETCHANT EFFECTIVE TO DISSOLVE SUBSTANTIALLY ONLY SAID FIRST SEMICONDUCTOR MATERIAL SUCH AS TO REMOVE ALL OF SAID ONE THIN LAYER FROM SAID SUBSTRATE EXCEPT FOR THAT PORTION UNDERLYING SAID DOT OF ETCH-RESISTANT MATERIAL, AND CONTINUING SAID LAST-MENTIONED STEP TO PURPOSEFULLY DISSOLVE SAID UNDERLYING PORTION OF SAID ONE THIN LAYER EXCEPT FOR A SMALL PART THEREOF DEFINING SAID SMALL AREA JUNCTION WITH SAID SUBSTRATE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-12-19 | 1970-06-20 | 1970-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-12-19 | 1974-06-20 | 1974-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-12-19 | 1978-06-20 | 1978-12-20 | $7700.00 | Window Closed / Lapsed |