Patent US4226111A successfully refreshed from Google Patents.
Patent US3293074A successfully refreshed from Google Patents.
US3293074A
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Method and apparatus for growing monocrystalline layers on monocrystalline substrates of semiconductor material
Assignee: Siemens and Halske AG
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Filing: 1964-11-04
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Granted: 1966-12-20
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Expires: 1984-11-04
Abstract
No abstract record available.
Inventors
- 👤 Nickl Julius
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:56
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/056; Y10S148/079; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
91 words
THE METHOD OF EPITAXIALLY GROWING MONOCRYSTALLINE SEMICONDUCTOR LAYERS UPON DISC-SHAPED ELECTRODELESS MONOCRYSTALLINE SEMICONDUCTOR SUBSTRATES BY THERMAL DISSOCIATION OF GASEOUS SEMICONDUCTOR COMPOUND AND PRECIPITATING THE EVOLVING SEMICONDUCTOR MATERIAL UPON THE SUBSTRATE IN A REACTION VESSEL HAVING GAS INLET AND OUTLET OPENINGS, WHICH COMPRISES PASSING A GASEOUS FLOW CONTAINING SAID COMPOUND FROM A PLURALITY IF INLET OPENINGS PARALLEL TO THE SUBSTRATE SURFACES WHICH ARE TO THE COATED WHILE HEATING THE SUBSTRATES TO THE DISSOCIATION TEMPERATURE OF THE COMPOUND, AND REMOVING THE RESIDUAL REACTION GAS FROM LOCALITY SUBSTANTIALLY ABOVE THE MIDDLE OF THE SUBSTRATES.
Claim 2
Independent Claim
91 words
THE METHOD OF EPITAXIALLY GROWING MONOCRYSTALLINE SEMICONDUCTOR LAYERS UPON DISC-SHAPED ELECTRODELESS MONOCRYSTALLINE SEMICONDUCTOR SUBSTRATES BY THERMAL DISSOCIATION OF GASEOUS SEMICONDUCTOR COMPOUND AND PRECIPITATING THE EVOLVING SEMICONDUCTOR MATERIAL UPON THE SUBSTRATE IN A REACTION VESSEL HAVING GAS INLET AND OUTLET OPENINGS, WHICH COMPRISES PASSING A GASEOUS FLOW CONTAINING SAID COMPOUND FROM A PLURALITY IF INLET OPENINGS PARALLEL TO THE SUBSTRATE SURFACES WHICH ARE TO THE COATED WHILE HEATING THE SUBSTRATES TO THE DISSOCIATION TEMPERATURE OF THE COMPOUND, AND REMOVING THE RESIDUAL REACTION GAS FROM LOCALITY SUBSTANTIALLY ABOVE THE MIDDLE OF THE SUBSTRATES.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-12-19 | 1970-06-20 | 1970-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-12-19 | 1974-06-20 | 1974-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-12-19 | 1978-06-20 | 1978-12-20 | $7700.00 | Window Closed / Lapsed |