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Patent US3290570A successfully refreshed from Google Patents.
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US3290570A Expired / Lapsed US ⏱️ 0.0 years remaining

Multilevel expanded metallic contacts for semiconductor devices

Assignee: Texas Instruments Inc
•
Filing: 1964-04-28
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Granted: 1966-12-06
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Expires: 1984-04-28
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Abstract

No abstract record available.

Inventors

  • 👤 James A Cunningham
  • 👤 Robert P Williams

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 11:14
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W72/00; H10W72/90; H10W72/01; H10W72/019; H10W72/01931; H10W72/01938; H10W72/01951; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/921; H10W72/923; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/753; H10W90/754; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12611; Y10T428/12771; Y10T428/12806; Y10T428/12826

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 127 words
A CONTACT AND LEAD ARRANGEMENT FOR A SEMICONDUCTOR DEVICE OF THE TYPE INCLUDING A SILICON WAFER HAVING A REGION ADJACENT ONE FACE THEREOF WITH A P-N JUNCTION BETWEEN SUCH REGION AND OTHER SILICON OF THE WAFER EXTENDING TO SAID ONE FACE BENEATH A SILICON OXIDE COATING, THE COATING DEFINING A SMALL OPENING OVER SAID REGION, THE CONTACT AND LEAD ARRANGEMENT COMPRISISNG A DEPOSITED LAYER OF MOLYBDENUM ENGAGING THE SURFACE OF SAID REGION IN SAID OPENING IN THE SILICON OXIDE COATING, THE LAYER OF MOLYBDENUM EXTENDING FROM SAID OPENING OUT OVER SAID SILICON OXIDE COATING IN DIRECT CONTACT THEREWITH AND OVER THE EDGE OF SAID JUNCTION TO A POSITION SPACED FROM SAID REGION ON SAID ONE FACE, AND A DEPOSITED LAYER OF GOLD OVERLYING SAID LAYER OF MOLYBDENUM.
Claim 2
Dependent Claim 127 words
A CONTACT AND LEAD ARRANGEMENT FOR A SEMICONDUCTOR DEVICE OF THE TYPE INCLUDING A SILICON WAFER HAVING A REGION ADJACENT ONE FACE THEREOF WITH A P-N JUNCTION BETWEEN SUCH REGION AND OTHER SILICON OF THE WAFER EXTENDING TO SAID ONE FACE BENEATH A SILICON OXIDE COATING, THE COATING DEFINING A SMALL OPENING OVER SAID REGION, THE CONTACT AND LEAD ARRANGEMENT COMPRISISNG A DEPOSITED LAYER OF MOLYBDENUM ENGAGING THE SURFACE OF SAID REGION IN SAID OPENING IN THE SILICON OXIDE COATING, THE LAYER OF MOLYBDENUM EXTENDING FROM SAID OPENING OUT OVER SAID SILICON OXIDE COATING IN DIRECT CONTACT THEREWITH AND OVER THE EDGE OF SAID JUNCTION TO A POSITION SPACED FROM SAID REGION ON SAID ONE FACE, AND A DEPOSITED LAYER OF GOLD OVERLYING SAID LAYER OF MOLYBDENUM.

References Cited (Backward Citations)

US3064167A Cited
US3028663A Cited
US3116174A Cited
US2981877A Cited
US2973466A Cited
US3065391A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1969-12-05 1970-06-06 1970-12-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1973-12-05 1974-06-06 1974-12-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1977-12-05 1978-06-06 1978-12-06 $7700.00 Window Closed / Lapsed

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