Thin film transistor and method of fabrication

Claim 1

A THIN FILM TRANSISTOR COMPRISING A SOURCE AND A DRAIN ELECTRODE DEFINING A SOURCE-DRAIN GAP, SEMICONDUCTOR MATERIAL FORMED WITHIN SAID CAP TO DEFINE AN ACTIVE LAYER ELECTRICALLY CONNECTING SAID SOURCE AND DRAIN ELECTRODES, A DIELECTRIC LAYER FORMED OVER SAID ACTIVE LAYER, AND A CONTROL GATE FORMED OVER SAID DIELECTRIC LAYER AND ARRANGED IN ELECTRICAL FIELD-APPLYING RELATIONSHIP AT ONE SURFACE OF SAID ACTIVE LAYER, SURFACE PORTIONS OF SAID ACTIVE LAYER ADJACENT SAID ONE SURFACE AND T A DEPTH LESS THAN A DEBYE LENGTH HAVING A LOWER RESISTIVITY THAN REMAINING PORTIONS OF SAID ACTIVE LAYER WHEREBY MAJORITY CARRIER FLOW ALONG SAID ACTIVE LAYER AND BETWEEN SAID SOURCE AND DRAIN ELECTRODES IN RESPONSE TO SAID CONTROL GATE IN ESSENTIALLY DETERMNED BY CARRIER MODULATION IN SAID SURFACE PORTIONS, SAID REMAINING PORTIONS OF SAID ACTIVE LAYER BEING OF SUFFICIENTLY HIGH RESISTIVITY SO AS NOT TO SUBSTANTIALLY CONTRIBUTE TO MAJORITY CARRIER FLOW BETWEEN SAID SOURCE AND DRAIN ELECTRODES.