Patent US3289053A successfully refreshed from Google Patents.
US3289053A
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Thin film transistor
Assignee: International Business Machines Corp
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Filing: 1963-12-26
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Granted: 1966-11-29
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Expires: 1983-12-26
Abstract
No abstract record available.
Inventors
- 👤 Rudolph R Haering
- 👤 Mark G Miksic
- 👤 William B Pennebaker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:03
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; C; C23; C23C; C23C14/00; C23C14/04; C23C14/042; H10D; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
98 words
A THIN FILM TRANSISTOR COMPRISING A SOURCE AND DRAIN ELECTRODE CONDUCTIVITY JOINED BY A LAYER OF SEMICONDUCTOR MATERIAL, A GATE ELECTRODE POSITIONED OVER SAID SEMICONDUCTOR LAYER AND OVERLAPPING PORTIONS OF SAID SOURCE AND DRAIN ELECTRODES, A FIRST DIELECRIC LAYER POSITIONEDF BETWEEN AND ELECTRICALLY INSULATING SAID GATE ELECTRODE AND SAID SEMICONDUCTOR LAYER, THE IMPROVEMENT COMPRISING A SECOND DIELECTRIC LAYER INTERMEDIATE OVERLAPPING PORTIONS OF SAID SOURCE AND DRAIN ELECTRODES AND SAID GATE ELECTRODE, RESPECTIVELY, TO PROVIDE A CAPACITANCE BETWEEN SAID OVERLAPPING PORTION LESS THAN THE CAPACITANCE PROVIDED BY SAID FIRST DIELECTRIC LAYER BETWEEN SAID GATE ELECTRODE AND SAID SEMICONDUCTOR LAYER.
Claim 2
Dependent Claim
98 words
A THIN FILM TRANSISTOR COMPRISING A SOURCE AND DRAIN ELECTRODE CONDUCTIVITY JOINED BY A LAYER OF SEMICONDUCTOR MATERIAL, A GATE ELECTRODE POSITIONED OVER SAID SEMICONDUCTOR LAYER AND OVERLAPPING PORTIONS OF SAID SOURCE AND DRAIN ELECTRODES, A FIRST DIELECRIC LAYER POSITIONEDF BETWEEN AND ELECTRICALLY INSULATING SAID GATE ELECTRODE AND SAID SEMICONDUCTOR LAYER, THE IMPROVEMENT COMPRISING A SECOND DIELECTRIC LAYER INTERMEDIATE OVERLAPPING PORTIONS OF SAID SOURCE AND DRAIN ELECTRODES AND SAID GATE ELECTRODE, RESPECTIVELY, TO PROVIDE A CAPACITANCE BETWEEN SAID OVERLAPPING PORTION LESS THAN THE CAPACITANCE PROVIDED BY SAID FIRST DIELECTRIC LAYER BETWEEN SAID GATE ELECTRODE AND SAID SEMICONDUCTOR LAYER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-11-28 | 1970-05-30 | 1970-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-11-28 | 1974-05-30 | 1974-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-11-28 | 1978-05-30 | 1978-11-29 | $7700.00 | Window Closed / Lapsed |