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US3289053A Expired / Lapsed US ⏱️ 0.0 years remaining

Thin film transistor

Assignee: International Business Machines Corp
•
Filing: 1963-12-26
•
Granted: 1966-11-29
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Expires: 1983-12-26
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Abstract

No abstract record available.

Inventors

  • 👤 Rudolph R Haering
  • 👤 Mark G Miksic
  • 👤 William B Pennebaker

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 21:20
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; C; C23; C23C; C23C14/00; C23C14/04; C23C14/042; H10D; H10D99/00

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 98 words
A THIN FILM TRANSISTOR COMPRISING A SOURCE AND DRAIN ELECTRODE CONDUCTIVITY JOINED BY A LAYER OF SEMICONDUCTOR MATERIAL, A GATE ELECTRODE POSITIONED OVER SAID SEMICONDUCTOR LAYER AND OVERLAPPING PORTIONS OF SAID SOURCE AND DRAIN ELECTRODES, A FIRST DIELECRIC LAYER POSITIONEDF BETWEEN AND ELECTRICALLY INSULATING SAID GATE ELECTRODE AND SAID SEMICONDUCTOR LAYER, THE IMPROVEMENT COMPRISING A SECOND DIELECTRIC LAYER INTERMEDIATE OVERLAPPING PORTIONS OF SAID SOURCE AND DRAIN ELECTRODES AND SAID GATE ELECTRODE, RESPECTIVELY, TO PROVIDE A CAPACITANCE BETWEEN SAID OVERLAPPING PORTION LESS THAN THE CAPACITANCE PROVIDED BY SAID FIRST DIELECTRIC LAYER BETWEEN SAID GATE ELECTRODE AND SAID SEMICONDUCTOR LAYER.
Claim 2
Dependent Claim 98 words
A THIN FILM TRANSISTOR COMPRISING A SOURCE AND DRAIN ELECTRODE CONDUCTIVITY JOINED BY A LAYER OF SEMICONDUCTOR MATERIAL, A GATE ELECTRODE POSITIONED OVER SAID SEMICONDUCTOR LAYER AND OVERLAPPING PORTIONS OF SAID SOURCE AND DRAIN ELECTRODES, A FIRST DIELECRIC LAYER POSITIONEDF BETWEEN AND ELECTRICALLY INSULATING SAID GATE ELECTRODE AND SAID SEMICONDUCTOR LAYER, THE IMPROVEMENT COMPRISING A SECOND DIELECTRIC LAYER INTERMEDIATE OVERLAPPING PORTIONS OF SAID SOURCE AND DRAIN ELECTRODES AND SAID GATE ELECTRODE, RESPECTIVELY, TO PROVIDE A CAPACITANCE BETWEEN SAID OVERLAPPING PORTION LESS THAN THE CAPACITANCE PROVIDED BY SAID FIRST DIELECTRIC LAYER BETWEEN SAID GATE ELECTRODE AND SAID SEMICONDUCTOR LAYER.

References Cited (Backward Citations)

GB439457A Cited
US2566666A Cited
US2804581A Cited
US2972092A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1969-11-28 1970-05-30 1970-11-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1973-11-28 1974-05-30 1974-11-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1977-11-28 1978-05-30 1978-11-29 $7700.00 Window Closed / Lapsed

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