US3287186A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices and method of manufacture thereof
Assignee: RCA Corp
•
Filing: 1963-11-26
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Granted: 1966-11-22
•
Expires: 1983-11-26
Abstract
No abstract record available.
Inventors
- 👤 Robert M Minton
- 👤 Glicksman Richard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:33
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10D; H10D8/00; H10D8/01; H10D8/043; H10D8/053; H10D8/70; H10P; H10P95/00; H10W20/00; H10W20/40; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D62/85; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/5363; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/051; Y10S148/072; Y10S438/00; Y10S438/979
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
118 words
THE METHOD OF FABRICATING A SEMICONDUCTOR JUNCTION DEVICE, COMPRISING THE STEPS OF APPLYING A MASK OF DIELECTRIC MATERIAL HAVING A PERIPHERAL NOTCH TO A LIMITED AREA ON ONE FACE OF A GIVEN CONDUCTIVITY TYPE CRYSTALLINE SEMICONDUCTIVE BODY; DEPOSITING A LAYER OF OPPOSITE CONDUCTIVITY TYPE CRYSTALLINE SEMICONDUCTIVE MATERIAL ON THE UNMASKED PORTION OF SAID MAJOR FACE WITHIN SAID NOTCH TO FORM A RECTIFYING BARRIER BETWEEN SAID SEMICONDUCTIVE LAYER AND SAID BODY; DEPOSITING A METALLIC LAYER OVER SAID MASK AND OVER SAID OPPOSITE CONDUCTIVITY TYPE LAYER WITHIN THE PERIPHERAL NOTCH OF SAID MASK; AND, LEAVING SAID MASK IN SITU WHILE REMOVING A PORTION OF SAID OPPOSITE TYPE SEMICONDUCTIVE LAYER WITHIN SAID NOTCH TO REDUCE THE AREA OF SAID RECTIFYING BARRIER.
Claim 2
Independent Claim
118 words
THE METHOD OF FABRICATING A SEMICONDUCTOR JUNCTION DEVICE, COMPRISING THE STEPS OF APPLYING A MASK OF DIELECTRIC MATERIAL HAVING A PERIPHERAL NOTCH TO A LIMITED AREA ON ONE FACE OF A GIVEN CONDUCTIVITY TYPE CRYSTALLINE SEMICONDUCTIVE BODY; DEPOSITING A LAYER OF OPPOSITE CONDUCTIVITY TYPE CRYSTALLINE SEMICONDUCTIVE MATERIAL ON THE UNMASKED PORTION OF SAID MAJOR FACE WITHIN SAID NOTCH TO FORM A RECTIFYING BARRIER BETWEEN SAID SEMICONDUCTIVE LAYER AND SAID BODY; DEPOSITING A METALLIC LAYER OVER SAID MASK AND OVER SAID OPPOSITE CONDUCTIVITY TYPE LAYER WITHIN THE PERIPHERAL NOTCH OF SAID MASK; AND, LEAVING SAID MASK IN SITU WHILE REMOVING A PORTION OF SAID OPPOSITE TYPE SEMICONDUCTIVE LAYER WITHIN SAID NOTCH TO REDUCE THE AREA OF SAID RECTIFYING BARRIER.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-11-21 | 1970-05-23 | 1970-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-11-21 | 1974-05-23 | 1974-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-11-21 | 1978-05-23 | 1978-11-22 | $7700.00 | Window Closed / Lapsed |