Housing for multi-lead semiconductor device including crimping connection means for one lead

Claim 1

A HOUSING FOR A SEMICONDUCTOR WAFER HAVING A FIRST AND SECOND POWER TERMINAL AND A GATE TERMINAL HAVING A LEAD EXTENDING THEREFROM; SAID HOUSING COMPRISING (A) A CONDUCTIVE BASE STUD HAVING A FLAT WAFER RECEIVING SURFACE; (B) A FIRST INSULATION TUBE HAVING SPACED UPPER AND LOWER BRAZING RINGS SURROUNDING THE UPPER AND LOWER END RESPECTIVELY OF SAID INSULATION TUBE AND EXTENDING BEYOND THE RESPECTIVE ENDS OF SAID FIRST INSULATION TUBE; (C) A GATE TERMINAL CONDUCTOR ELECTRICALLY CONNECTED TO THE INTERIOR OF SAID UPPER BRAZING RING; SAID GATE TERMINAL CONDUCTOR HAVING A GATE LEAD-RECEIVING SECTION FOR ELECTRICALLY AND MECHANICALLY RECEIVING SAID LEAD EXTENDING FROM SAID WAFER BY CRIMPING; (D) A SECOND INSULATION TUBE HAVING A SMALLER DIAMETER THAN SAID FIRST INSULATION TUBE AND HAVING SPACED UPPER AND LOWER BRAZING RINGS SURROUNDING THE UPPER AND LOWER END RESPECTIVELY OF SAID SECOND INSULATION TUBE; (E) A POWER TERMINAL LEAD CONNECTED TO SAID UPPER BRAZING RING OF SAID SECOND INSULATION TUBE AND EXTENDING THROUGH SAID FIRST AND SECOND INSULATION TUBES AND TERMINATING ON SAID FIRST POWER TERMINAL OF SAID WAFER; (F) SAID WAFER BEING MOUNTED ON SAID FLAT WAFER-RECEIVING SURFACE OF SAID CONDUCTIVE BASE STUD; SAID SECOND POWER TERMINAL OF SAID WAFER BEING DIRECTLY CONNECTED TO SAID CONDUCTIVE BASE STUD; SAID LOWER BRAZING RING OF SAID FIRST INSULATION TUBE BEING BRAZED TO AN ANNULAR AREA OF SAID FLAT WAFER-RECEIVING SURFACE SURROUNDING SAID WAFER; SAID LOWER BRAZING RING OF SAID SECOND INSULATION TUBE BEING BRAZED TO SAID UPPER BRAZING RING OF SAID INSULATION TUBE.