Abstract 1,065,182. Semi-conductor devices. GENERAL ELECTRIC CO. April 5, 1965 [April 22, 1964], No. 14373/65. Heading H1K. A PN junction containing semi-conductor body with a film of oxide over the junction is encapsulated with a non-ionizable insulating material separating the encapsulant from the body. The insulating material is chemically non-reactive with the encapsulant, semi-conductor body and oxide. An oxide passivated silicon planar transistor (Fig. 4) has its collector region gold-soldered to a steel or " Kovar " (Registered Trade Mark) strip 20 which is then mounted on one of the wires of a header. The aluminium emitter 18 and base 16 electrodes are fixed to the other header wires via gold wires 26, 28 thermocompression bonded to them. After coating the silicon body and adjoining parts with the particulate insulating material 44, e.g. by dipping in a slurry of boron nitride particles or a mixture of feldspar, air-floated clay and bentonite and drying, the assembly is encapsulated in epoxy resin, glass or lead. The encapsulating, particulate insulating, and header materials preferably have thermal expansion coefficients matched to that of silicon.
/A P-N JUNCTION SEMICONDUCTOR DEVICE COMPRISING A BODY OF SEMICONDUCTOR MATERIAL CONTAINING A P-N JUNCTION, A FILM OF AN OXIDE OF SAID SEMICONDUCTOR MATERIAL ON THE SEMICONDUCTOR BODY AND COVERING SAID P-N JUNCTION, A BODY OF ENCAPSULATING MATERIAL PROTECTIVELY ENCLOSING AT LEAST A PORTION OF THE EXTERIOR OF SAID SEMICONDUCTOR BODY, AND ANOTHER LAYER OF FINELY-DIVIDED PARTICULATE INORGANIC NON-IONIZABLE EARTHLY NON-METALLIC ELECTRICALLY INSULATIVE MATERIAL HAVING A MELTING POINT HIGHER THAN 200* C. SEPARATING SAID ENCAPSULATING MATERIAL FROM CONTACT WITH ANY PORTION OF SAID SEMICONDUCTOR BODY OR FILM SAID SEPARATING LAYER BEING CHEMICALLY NON-REACTIVE WITH SAID SEMICONDUCTOR MATERIAL AND CHEMICALLY NON-REACTIVE WITH SAID CAPSULATING MATERIAL.
Claim 2
Dependent Claim
104 words
/A P-N JUNCTION SEMICONDUCTOR DEVICE COMPRISING A BODY OF SEMICONDUCTOR MATERIAL CONTAINING A P-N JUNCTION, A FILM OF AN OXIDE OF SAID SEMICONDUCTOR MATERIAL ON THE SEMICONDUCTOR BODY AND COVERING SAID P-N JUNCTION, A BODY OF ENCAPSULATING MATERIAL PROTECTIVELY ENCLOSING AT LEAST A PORTION OF THE EXTERIOR OF SAID SEMICONDUCTOR BODY, AND ANOTHER LAYER OF FINELY-DIVIDED PARTICULATE INORGANIC NON-IONIZABLE EARTHLY NON-METALLIC ELECTRICALLY INSULATIVE MATERIAL HAVING A MELTING POINT HIGHER THAN 200* C. SEPARATING SAID ENCAPSULATING MATERIAL FROM CONTACT WITH ANY PORTION OF SAID SEMICONDUCTOR BODY OR FILM SAID SEPARATING LAYER BEING CHEMICALLY NON-REACTIVE WITH SAID SEMICONDUCTOR MATERIAL AND CHEMICALLY NON-REACTIVE WITH SAID CAPSULATING MATERIAL.
Claim 3
Dependent Claim
22 words
A DEVICE AS DEFINED IN CLAIM 1 WHEREIN SAID LAYER CONSISTS ESSENTIALLY OF A MIXTURE OF FELDSPAR, AIR FLOATED CLAY, AND BENTONITE.