Multidielectric thin film capacitors

Claim 1

A CAPACITOR DEPOSITED ON A THIN FILM CIRCUIT SUBSTRATE COMPRISING A PAIR OF SUBSTANTIALLY PARALLEL METALLIC PLATES, AND A DIELECTRIC INTERPOSED BETWEEN SAID PLATES, SAID DIELECTRIC INCLUDING A FIRST FILM OF VAPOR DEPOSITED MATERIAL HAVING A SELECTED LOW EVAPORATION TEMPERATURE AND A SELECTED DIELECTRIC CONSTANT TO IMPART A PREDETERMINED CAPACITANCE TO THE CAPACITOR, AND A SECOND FILM OF VAPOR DEPOSITED MATERIAL HAVING A SELECTED EVAPORATION TEMPERATURE SUBSTANTIALLY HIGHER THAN THAT OF SAID FIRST FILM AND A LEAKAGE CHARACTERISTIC SUBSTANTIALLY LOWER THAN THE LEAKAGE CHARACTERISTIC OF SAID FIRST FILM BEING APPROXIMATELY ONE-SEVENTH THE THICKNESS OF THE FIRST FILM OF VAPOR DEPOSITED MATERIAL.

Claim 2

A METHOD FOR FABRICATING THIN FILM CIRCUIT CAPACITORS HAVING A SELECTED LOW LEAKAGE CHARACTERISTIC AND A PREDETERMINED THICKNESS COMPRISING THE STEPS OF DEPOSITING A FIRST METALLIC THIN FILM ON A THIN GLASS SUBSTRATE, VAPOR DEPOSITING A FIRST THIN FILM LAYER OF A FIRST DIELECTRIC MATERIAL HAVING CHARACTERISTICS SELECTED TO FURNISH A PREDETERMINED DIELECTRIC CONSTANT TO A SELECTED THICKNESS ON SAID FIRST METALLIC FILM, VAPOR DEPOSITING A SECOND THIN FILM LAYER OF A SECOND DIELECTRIC MATERIAL HAVING A LEAKAGE CHARACTERISTIC SUBSTANTIALLY LOWER THAN THAT OF SAID FIRST DIELECTRIC MATERIAL TO A THICKNESS OF APPROXIMATELY ONE-SEVENTH OR LESS THAT OF SAID FIRST LAYER, AND DEPOSITING A SECOND METALLIC THIN FILM TO COVER SAID FILM OF SECOND DIELECTRIC MATERIAL.