US3272748A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching of silicon and germanium
Assignee: AT&T Inc
•
Filing: 1964-06-29
•
Granted: 1966-09-13
•
Expires: 1984-06-29
Abstract
No abstract record available.
Inventors
- 👤 Alfons H Szkudlapski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:22
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; C; C09; C09K; C09K13/00; C09K13/04; C09K13/08
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
51 words
THE METHOD OF ETCHING A SURFACE OF A SEMICONDUCTIVE MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM, WHICH COMPRISES TREATING THE SURFACE WITH A SOLUTION CONTAINING NITRIC ACID, HYDROFLUORIC ACID AND IODINE MONOBROMIDE, THE AMOUNT OF IODINE MONOBROMIDE IN SAID SOLUTION RANGING FROM MORE THAN A TRACE TO SATURATION.
Claim 2
Independent Claim
51 words
THE METHOD OF ETCHING A SURFACE OF A SEMICONDUCTIVE MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM, WHICH COMPRISES TREATING THE SURFACE WITH A SOLUTION CONTAINING NITRIC ACID, HYDROFLUORIC ACID AND IODINE MONOBROMIDE, THE AMOUNT OF IODINE MONOBROMIDE IN SAID SOLUTION RANGING FROM MORE THAN A TRACE TO SATURATION.
References Cited (Backward Citations)
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Cited
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Cited
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US3117899A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-09-12 | 1970-03-14 | 1970-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-09-12 | 1974-03-14 | 1974-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-09-12 | 1978-03-14 | 1978-09-13 | $7700.00 | Window Closed / Lapsed |