Patent US3269878A successfully refreshed from Google Patents.
US3269878A
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Method of producing iii-v semiconductor compounds in crystalline form
Assignee: Siemens Schuckertwerke AG
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Filing: 1963-12-05
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Granted: 1966-08-30
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Expires: 1983-12-05
Abstract
No abstract record available.
Inventors
- 👤 Wenzel Federico Edwardo
- 👤 Merkel Hans
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:08
CPC Classifications
C; C30; C30B; C30B25/00; C01; C01B; C01B25/00; C01B25/06; C22; C22C; C22C1/00; C22C1/007; C30B29/00; C30B29/10; C30B29/40; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/065; Y10S148/072; Y10S148/079
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
132 words
THE METHOD OF PRODUCING PHOSPHIDES, ARSENIDES AND ANTIMONIDES OF BORON, ALUMINUM, GALLIUM AND INDIUM OF THE TYPE AIIIBV IN PURIFIED AND CRYSTALLINE CONSTITUTION, WHICH COMPRISES PASSING A VAPOR CURRENT CONSISTING OF THE BV ELEMENT OF SAID COMPOUND OVER A STARTING MATERIAL SELECTED FROM THE GROUP CONSISTING OF THE AIIBV COMPOUND AND THE AIII ELEMENT THEREOF, IN A HIGH-TEMPERATURE ZONE OF A REACTION SYSTEM FREE OF OTHER REACTION PARTICIPANTS SO THAT BY ELEMENT COMES INTO CONTACT WITH THE STARTING MATERIAL AND ENTERS INTO A PHYSICALCHEMICAL REACTION THEREWITH, AND THEN PASSING THE VAPORS TO A LOW-TEMPERATURE ZONE AND PRECIPITATING THEREIN THE COMPOUND IN CRYSTALLINE FORM, THE TEMPERATURE IN THE HIGH-TEMPERATURE ZONE BEING ABOVE THE VAPORIZATION MINIMUM OF SAID STARTING MATERIAL, AND THE MINIMUM OF TEMERATURE DIFFERENCE BETWEEN SAID ZONES BEING ABOUT 10 TO 30*C.
Claim 2
Independent Claim
132 words
THE METHOD OF PRODUCING PHOSPHIDES, ARSENIDES AND ANTIMONIDES OF BORON, ALUMINUM, GALLIUM AND INDIUM OF THE TYPE AIIIBV IN PURIFIED AND CRYSTALLINE CONSTITUTION, WHICH COMPRISES PASSING A VAPOR CURRENT CONSISTING OF THE BV ELEMENT OF SAID COMPOUND OVER A STARTING MATERIAL SELECTED FROM THE GROUP CONSISTING OF THE AIIBV COMPOUND AND THE AIII ELEMENT THEREOF, IN A HIGH-TEMPERATURE ZONE OF A REACTION SYSTEM FREE OF OTHER REACTION PARTICIPANTS SO THAT BY ELEMENT COMES INTO CONTACT WITH THE STARTING MATERIAL AND ENTERS INTO A PHYSICALCHEMICAL REACTION THEREWITH, AND THEN PASSING THE VAPORS TO A LOW-TEMPERATURE ZONE AND PRECIPITATING THEREIN THE COMPOUND IN CRYSTALLINE FORM, THE TEMPERATURE IN THE HIGH-TEMPERATURE ZONE BEING ABOVE THE VAPORIZATION MINIMUM OF SAID STARTING MATERIAL, AND THE MINIMUM OF TEMERATURE DIFFERENCE BETWEEN SAID ZONES BEING ABOUT 10 TO 30*C.
References Cited (Backward Citations)
US2871100A
Cited
US3021196A
Cited
US2937075A
Cited
US2921905A
Cited
US3019092A
Cited
US3073679A
Cited
US3094388A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-29 | 1970-02-28 | 1970-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-29 | 1974-02-28 | 1974-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-29 | 1978-02-28 | 1978-08-30 | $7700.00 | Window Closed / Lapsed |